The present invention pertains to a process for direct deposition of graphene oxide onto a substrate of interest from a gaseous source of at least one carbon precursor, using a plasma-enhanced chemical vapor deposition method. It is also directed to a device for implementing this process.

The present disclosure relates to pongamia compositions having low concentrations of karanjin and other active chemical components intrinsic to pongamia oilseeds, methods of preparing and using said pongamia compositions. The present disclosure also relates to methods of analyzing pongamia compositions, as well as uses of the pongamia compositions.

Device (100,200) for processing a substance, its oxide and/or its sulphide, the substance being a metal or metalloid, the device (100,200) comprising a reaction chamber (110,210) and an expansion chamber (120,220); a plasma generator device (160,260), arranged to emit a plasma stream (163,263) into the reaction chamber (110,210), the plasma stream (163,263) comprising said material; a gas provision means (170), arranged to provide an inert (171) and/or reducing (172) gas to the reaction chamber (110,210); a DeLaval nozzle (180,280), arranged to convey gases from the reaction chamber (110,210) to the expansion chamber (120,220) and arranged to lower the temperature of the gases passing through the DeLaval nozzle (180,280) to below the condensation temperature of the substance, causing the gas compound to condense into a liquid or solid phase; and a vessel (190,290), into which the condensed substance is directed by the DeLaval nozzle (180,280). The invention also relates to a method.

A plasma processing method for a gas includes: supplying a gas inside a cavity for plasma processing, supplying microwaves having a predetermined frequency and power in order to generate a plasma of the gas, and propagating the microwaves in the gas by a waveguide which communicates directly with the cavity so as to provide a plasma cracking processing operation for the gas inside the cavity.