Embodiments include a reaction vessel having a first reaction chamber filled with a first material; a first light absorbing region adhered to an interior-facing surface of the first reaction chamber; a second reaction chamber filled with a second material; a second light absorbing region adhered to an interior-facing surface of the second reaction chamber; a temperature sensor disposed within the second reaction chamber; and one or more energy sources configured to direct light at the first light absorbing region and the second light absorbing region. A processor may be employed to determine a first temperature of the first material from a second temperature of the second material measured by the temperature sensor. Methods of manufacturing such a reaction vessel are also disclosed.

The present invention provides a living radical polymerization method for a vinyl monomer by near-infrared photothermal conversion. The method comprises irradiating a reactor with near-infrared light of 750-850 nm, wherein the reactor has a first chamber and a second chamber that are isolated from each other, the first chamber contains an organic solution of a near-infrared light responsive croconaine dye, and the second chamber is provided with a closed reaction flask containing a reaction solution, the reaction solution comprises a vinyl monomer, two or more of an ATRP initiator, an ATRP ligand, an ATRP catalyst, an RAFT reagent, a thermal initiator, and an additive, and an organic solvent; and the near-infrared light responsive dye converts the near-infrared light into heat energy, by which the reactor is heated to 50-100? C. to polymerize the monomer in the reaction solution, to obtain polymers with controlled molecular weights and molecular weight distributions.

A source vessel for use in a semiconductor processing system to supply precursor materials by providing enhanced control over vapor pressures. The source vessel includes a housing or vessel defining a chamber for holding a volume of precursor in a liquid state. The source vessel further includes a temperature sensor configured to detect a temperature of a surface of the liquid-state precursor that is presently contained within the chamber of the housing. The temperature sensor may take the form of a temperature measurement device such as a thermocouple on a float or a non-contact temperature measurement device such as an infrared (IR) temperature sensor with a line-of-sight to the liquid's surface.

Provided is a method for producing particles, the method including a particle generating step of forming a product particle flow including target product particles by heating a segmented reaction raw material liquid flow divided into segments by a gas for segmentation under applying pressure at a pressure P.sub.1 (MPa) and at a heating temperature T ( C.) to react the raw material for particle formation to generate the target product particles, in which, at the particle generating step, (V.sub.d/V.sub.c) is 0.200 to 7.00 and the pressure P.sub.1 at the particle generating step is 2.0 times or more a vapor pressure P.sub.2 (MPa) of a solvent at the heating temperature T. According to the present invention, a method for producing particles having a narrow particle size distribution with high production efficiency can be provided.

A source vessel for use in a semiconductor processing system to supply precursor materials by providing enhanced control over vapor pressures. The source vessel includes a housing or vessel defining a chamber for holding a volume of precursor in a liquid state. The source vessel further includes a temperature sensor configured to detect a temperature of a surface of the liquid-state precursor that is presently contained within the chamber of the housing. The temperature sensor may take the form of a temperature measurement device such as a thermocouple on a float or a non-contact temperature measurement device such as an infrared (IR) temperature sensor with a line-of-sight to the liquid's surface.