B01J2219/0888

MODULAR PHOTOCHEMICAL FLOW REACTOR SYSTEM

A modular photochemical reactor system comprises a plurality of fluidic modules (20) each having i) a central planar process fluid layer (30) and ii) two outer planar thermal control fluid layers (40) for containing flowing thermal control fluid and a plurality of illumination modules (50), the illumination modules (50) of said plurality each having a planar form with first and second major surfaces (52, 54) and each comprising at least a first array (60) of semiconductor emitters (70), said emitters (70) positioned to emit from or through the first major surface (52), wherein said first array (60) of semiconductor emitters (70) comprises at least a first emitter (72) and a second emitter (74), the first emitter (72) capable of emitting at a first center wavelength and the second emitter (74) capable of emitting at a second center wavelength, said first and second center wavelengths differing from each other.

DEVICE FOR ANALYSING ELECTROCATALYTIC REACTIONS

The invention relates to an apparatus for investigating electrocatalytic reactions comprising a container (3) having a stirrer (5), wherein the container (3) is internally lined with an electrically insulating coating or is manufactured from an electrically insulating material and the stirrer (5) has at least one stirrer shaft (17) provided with an electrically insulating coating or manufactured from an electrically insulating material and electrodes (9, 9a, 9b; 11, 11a, 11b) configured as exchangeable baskets (7; 7a; 7b) are positioned in the container (3).

PROCESS FOR THE PREPARATION OF PURE OCTACHLOROTRISILANES AND DECACHLOROTETRASILANES

The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.

A Production Process for Silicon Carbide

Inside a furnace body with a vacuum environment or under the inert gas protection, the raw silicon material used to produce silicon carbide is melted or vaporized in a high temperature environment over 1300 C., and then the melted or vaporized raw silicon material will react with the carbonaceous gas or liquid to form silicon carbide. The present invention uses the carbonaceous gas with no metallic impurities, to replace petroleum coke, resin, asphalt, graphite, carbon fiber, coal, charcoal and some other carbon sources used in current production processes. When the carburizing reaction is in progress, the raw silicon material is melted or vaporized and the reaction takes place in the air. No container is required, so impurity contamination is lessened, and the produced silicon carbide has a fairly high purity.

Method for activating a chemical reaction, solution that can be activated by said method and device for implementing said method

The invention relates to a method which comprises emitting ultrasound into a liquid mixture containing first and second reagents in separate phases initially separated by a liquid precursor-gas barrier, the ultrasound having a high enough energy level to vaporize the precursor gas, such as to contact the reagents and thus to activate a chemical reaction therebetween.

PHOTOCATALYTIC PANEL AND METHODS FOR CONTINUOUS HYDROGEN PRODUCTION
20250368503 · 2025-12-04 ·

The disclosure relates to systems and methods for continuous hydrogen production using photocatalysis. Specifically, the disclosure relates to systems and methods for continuous hydrogen production using photocatalysis of water utilizing semiconductor charge carriers immobilized on removable carriers in the presence of a reducing agent such as tertiary amines.