Patent classifications
B06B1/0662
ULTRASONIC DEVICE AND METHOD OF MANUFACTURING ULTRASONIC DEVICE
An ultrasonic device includes: a substrate that includes, at a first surface thereof, one or more vibrators that generate ultrasonic waves by vibrating and a plurality of electrodes coupled to the vibrators; a protective substrate that protects the vibrators and is provided with an opening facing the electrode on a first surface side of the substrate; and a gap material that provides a gap between the substrate and the protective substrate, and in a plan view of the substrate and the protective substrate in a stacking direction thereof, the opening includes the electrode inside.
PULSE TRAIN EXCITATION FOR CAPACATIVE MICROMACHINED ULTRASONIC TRANSDUCER
Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.
CONTOURED ELECTRODE FOR CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER
Aspects of this disclosure relate to a capacitive micromachined ultrasonic transducer (CMUT) with a contoured electrode. In certain embodiments, the CMUT has a contoured electrode. The electrode may be non-planar to correspond to a deflected shape of the outer plate. A change in distance between the electrode and the plate after deflection may be greater than a minimum threshold across the width of the CMUT.
ULTRASONIC TRANSDUCER FOR MEASURING WELLBORE CHARACTERISTICS
An ultrasonic transducer positionable in a wellbore environment may include a piezoelectric material layer, a protective layer, and connecting plate positioned between the piezoelectric material layer and the protective layer. The piezoelectric material layer may be formed as a plurality of columns of piezoelectric material for detecting a characteristic of the wellbore environment during a drilling operation. The protective layer may be positionable between the piezoelectric material layer and an acoustic medium in the wellbore environment. The connecting plate may be positioned between the piezoelectric material layer and the protective layer. The connecting plate may have a coefficient of thermal expansion (CTE) in a range between the CTE of the piezoelectric material layer and that of the protective layer, and an acoustic impedance in a range between the acoustic impedance of the piezoelectric material layer and that of the protective layer.
Imaging devices having piezoelectric transducers
An imaging system includes: a transceiver cell for generating a pressure wave and converting an external pressure wave into an electrical signal; and a control unit for controlling an operation of the transceiver cell. The transceiver cell includes: a substrate; at least one membrane suspending from the substrate; and a plurality of transducer elements mounted on the at least one membrane. Each of the plurality of transducer elements has a bottom electrode, a piezoelectric layer on bottom electrode, and at least one top electrode on the piezoelectric layer. Each of the plurality of transducer element generates a bending moment in response to applying an electrical potential across the bottom electrode and the at least one top electrode and develops an electrical charge in response to a bending moment due to the external pressure wave.
TRANSDUCER DEVICE AND TRANSDUCER SYSTEM
A transducer device having a configuration capable of expanding the utilization is provided. A transducer device includes a transducer element, elastic bodies sandwiching the transducer element from two sides and having an elastic modulus smaller than that of the transducer element in a sandwiching direction, a case including an accommodating part for accommodating a transducer unit and having an opening, and an elastic plate member including a support part supported by the case, a facing surface part positioned at the opening of the case and facing the transducer unit, and an elastic deformation part connecting the support part and the facing surface part.
INTERCONNECTION FOR MONOLITHICALLY INTEGRATED STACKED DEVICES AND METHODS OF FORMING THEREOF
A monolithic integrated device may include a first device having a complementary metal-oxide-semiconductor (CMOS) substrate, and a second device arranged over the CMOS substrate. The second device may include a first conductive element, and a second conductive element arranged over the first conductive element. A via opening may extend through the first conductive element and the second conductive element of the second device to an interconnect of the CMOS substrate. A via contact may be arranged in the via opening to contact the first conductive element, the second conductive element, and the interconnect of the CMOS substrate. The via contact electrically connects the first conductive element and the second conductive element of the second device to the interconnect of the CMOS substrate.
MEMS DEVICE
A MEMS device includes a membrane portion, a piezoelectric layer made of a piezoelectric single crystal, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite to the first direction, and a first layer covering the first surface of the piezoelectric layer. At least a portion of the piezoelectric layer is included in the membrane portion. Each of the first electrode and the second electrode has a tapered cross-sectional shape with a width which decreases with increasing distance from the piezoelectric layer on a cross section along a plane vertical to the surface in the first direction.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device and a manufacturing method thereof are provided. The display device includes a firs substrate, a second substrate, first signal lines, second signal lines, a first insulation layer, active components, a display medium, and ultrasonic transducers. The first insulation layer is located between the first signal lines and the second signal lines. Cavities are located in the first insulation layer having thin films located on the cavities. Each of the ultrasonic transducers includes first and second electrodes. A first electrode and a corresponding first signal line belong to a same layer and are electrically connected with each other. A second electrode and a corresponding second signal line belong to a same layer and are electrically connected with each other. A corresponding cavity and a corresponding thin film are sandwiched between the first and second electrodes.
VIBRATION DEVICE
A vibration device includes a substrate having a first surface and a second surface at an opposite side to the first surface, a vibration element disposed on the first surface, a first through electrode which penetrates the substrate, and is configured to electrically couple the power supply interconnection disposed on the second surface and the first circuit block disposed on the first surface, and a second through electrode which penetrates the substrate, and is configured to electrically couple the power supply interconnection and the second circuit block including an analog circuit disposed on the first circuit, wherein R1>R4 and R2>R4, in which R1 is an electric resistance of the first through electrode, R2 is an electric resistance of the second through electrode, and R4 is an electric resistance of a zone of the power supply interconnection coupling the first through electrode and the second through electrode.