A disclosed circuit arrangement includes a support structure having first and second posts. Electrically conductive round wire has a round cross-section, and a first portion is wrapped at least partially around the first post. A second portion of the wire extends in a straight line from a point on a perimeter of the first post to a point on a perimeter of the second post, and a third portion of the wire is wrapped at least partially around the second post. The second portion of the round wire defines one or more bond sites. An electronic device is electrically connected to the round wire at one of the one or more bond sites.

A method for calibrating a wire clamp device includes: preparing a wire clamp device provided with a pair of arm parts having tips for clamping a wire, the arms extending from the tips toward base ends, and a drive part provided with a piezoelectric element for drive, connected to the base ends of the pair of arm parts and opening/closing the tips of the pair of arm parts; a step of detecting, by electrical continuity between the tips, a timing at which the pair of arm parts enters a closed state when the piezoelectric element for drive is driven, and acquiring a reference voltage; and a step of calibrating, on the basis of the reference voltage, an application voltage to be applied to the piezoelectric element for drive. Thus, it is possible to perform accurate and stable wire bonding.

A wire bonding machine is provided. The wire bonding machine includes: (a) a wire bonding tool; (b) a wire guide for guiding a wire to a position beneath a bonding surface of the wire bonding tool, the wire guide being configured for movement between (i) an engagement position with respect to the wire bonding tool and (ii) a non-engagement position with respect to the wire bonding tool; and a cleaning station for cleaning at least a portion of a tip of the wire bonding tool when the wire guide is in the non-engagement position.

A method for forming an integrated circuit (IC) package is provided. In some embodiments, a semiconductor workpiece comprising a scribe line, a first IC die, a second IC die, and a passivation layer is formed. The scribe line separates the first and second IC dies, and the passivation layer covers the first and second IC dies. The first IC die comprises a circuit and a pad structure electrically coupled to the circuit. The pad structure comprises a first pad, a second pad, and a bridge. The bridge is within the scribe line and connects the first pad to the second pad. The passivation layer is patterned to expose the first pad, but not the second pad, and testing is performed on the circuit through the first pad. The semiconductor workpiece is cut along the scribe line to individualize the first and second IC dies, and to remove the bridge.

In order to easily and accurately measure an offset for wire bonding and improve precision of wire bonding, a wiring bonding apparatus includes a first imaging unit, a bonding tool, a moving mechanism, a reference member, a second imaging unit arranged on the opposite side to the bonding tool and the first imaging unit with respect to a reference surface, and a control unit. The first imaging unit detects a position of an optical axis of the first image capture unit with respect to a position of the reference member, the second imaging unit detects the position of the reference member when moving the bonding tool above the reference member according to pre-stored offset values, and detects a position of a ball-shaped tip section of a wire, and the control unit measures a change in offset between the bonding tool and the first imaging unit based on each detection result.

A method for forming an integrated circuit (IC) package is provided. In some embodiments, a semiconductor workpiece comprising a scribe line, a first IC die, a second IC die, and a passivation layer is formed. The scribe line separates the first and second IC dies, and the passivation layer covers the first and second IC dies. The first IC die comprises a circuit and a pad structure electrically coupled to the circuit. The pad structure comprises a first pad, a second pad, and a bridge. The bridge is within the scribe line and connects the first pad to the second pad. The passivation layer is patterned to expose the first pad, but not the second pad, and testing is performed on the circuit through the first pad. The semiconductor workpiece is cut along the scribe line to individualize the first and second IC dies, and to remove the bridge.

Disclosed is a method of measuring a free air ball size during a wire bonding process of a wire bonder, which comprises a position sensor and a bonding tool for forming an electrical connection between a semiconductor device and a substrate using a bonding wire. Specifically, the method comprises the steps of: forming a free air ball from a wire tail of the bonding wire; using the position sensor to determine a positional difference between a first and a second position of the bonding tool with respect to a reference position, wherein the first position of the bonding tool is a position of the bonding tool with respect to the reference position when the free air ball contacts a conductive surface; and measuring the free air ball size based on the positional difference of the bonding tool as determined by the position sensor. A wire bonder configured to perform such a method is also disclosed.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to a position above the wire bond; (c) moving the wire bonding tool to contact the length of wire, at a position along the length of wire, to partially sever the length of wire at the position along the length of wire; and (d) separating the length of wire from a wire supply at the position along the length of wire, thereby providing a wire interconnect structure bonded to the bonding location.

A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core includes: (a) pure silver consisting of silver and further components; or (b) doped silver consisting of silver, at least one doping element, and further components; or (c) a silver alloy consisting of silver, palladium and further components; or (d) a silver alloy consisting of silver, palladium, gold, and further components; or (e) a doped silver alloy consisting of silver, palladium, gold, at least one doping element, and further components, wherein the individual amount of any further component is less than 30 wt.-ppm and the individual amount of any doping element is at least 30 wt.-ppm, and the coating layer is a single-layer of gold or palladium or a double-layer comprised of an inner layer of nickel or palladium and an adjacent outer layer of gold.

The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.