A method and a laser assemblage are described for material processing, such that in a laser assemblage, a laser beam is focused onto a processing/imaging plane and the laser beam can be adapted in terms of its intensity distribution by way of at least one beam shaper. Provision is made in this context that in order to avoid uniformity defects in the processing/imaging plane, the laser beam is split by way of at least one beam splitter into at least two partial or individual beams, and the partial or individual beams are differently influenced, or each partial or individual beam is constituted from a laser source having a different wavelength, in such a way that after they are combined and focused onto the processing/imaging plane they form an output beam having an intensity profile, adjacent intensity maxima of the intensity profile differing in terms of their light properties. It is thereby possible to prevent the occurrence of obtrusive interference so that obtrusive speckle patterns are largely eliminated, with the result that beam shaping quality, in particular for laser processing processes, can be considerably improved.

A method of manufacturing a display apparatus includes: forming a plurality of displays including a light-emitting diode on a surface of a first mother substrate; preparing a second mother substrate; forming a first sealed area on a surface of at least one of the first mother substrate or the second mother substrate, wherein the first sealed area surrounds each of the plurality of displays and includes a frit; firstly bonding the first mother substrate to the second mother substrate by melting the frit in the first sealed area by radiating a first laser beam; and secondly bonding the first mother substrate to the second mother substrate by forming a second sealed area in which the frit and the first mother substrate, and/or the frit and the second mother substrate, are melted and mixed with each other by radiating a second laser beam partially in the first sealed area.

A multiple wavelength laser processing system is configured with a multiple wavelength laser source for generating a multiple wavelength coaxial laser processing beam. The laser processing system further includes a multiple wavelength optical system to deliver the coaxial laser processing beam to a laser-material interaction zone on the surface of a workpiece such that each of the first and a second laser wavelengths in the processing beam impinge at least a portion of the interaction zone as respective first and second concentric laser spots. The multiple wavelength optical system includes a multiple wavelength beam collimator, a configurable chromatic optic, and a laser processing focus lens, wherein the configurable chromatic optic provides an adjustment to the relative focus distance of the first and second laser wavelengths.

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

A laser welding method includes a welding process of irradiating a multiple laser beam so as to weld together a first member and a second member at a boundary. The multiple laser beam includes a first beam that is advanced while forming a first molten pool in which the first member is melted, a second beam that is advanced while forming a second molten pool in which the second member is melted, and a main beam that is advanced subsequently to the first beam and the second beam and irradiated to an integrated molten pool formed by integration of the first molten pool and the second molten pool. The first beam and the second beam do not swing, while the main beam swings with respect to the boundary.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

A system for LAM that uses a scalable array of individually controllable laser beams that are generated by a fiber array system to process materials into an object using a powder bed, wire feed, or direct deposition. The adaptive control of individual beams may include beam power, focal spot width, centroid position, scanning orientation, amplitude and frequency, piston phase and polarization states of individual beams. These characteristics can be independently adjusted to control LAM characteristics including microstructure, mechanical and surface quality characteristics. The system may also have a set of material sensors that gather information on a material and environment immediately before, during, and immediately after processing. This information can be used to adapt the material processing routine to improve LAM productivity and parts quality. The system also supports a variety of beam shaping methods that improve the quality of produced objects or mitigate processing issues.

A laser processing device comprising: an optical arrangement; wherein the optical arrangement comprises an input for receiving a laser beam; wherein the optical arrangement comprises a beam splitter that splits the laser beam into at least two partial beams; wherein the optical arrangement recombines the partial beams into a laser spot for generating an interference pattern in the laser spot; wherein a first state of the laser beam at the input generates a first interference pattern and a second state of the laser beam generates a second interference pattern; wherein the first state and the second state differ in at least one of (i) a position of the laser beam at the input and (ii) an angle of incidence of the laser beam with respect to the input; and wherein the optical arrangement is configured such that the second interference pattern continues the first interference pattern in phase.

A method for laser processing of a workpiece includes splitting a pulsed laser beam among a plurality of partial beams. Each partial beam has one of two different polarization states. The method further includes processing the workpiece by focusing the plurality of partial beams into a plurality of at least partially overlapping partial regions of a continuous interaction region. Partial beams having different polarization states are focused into adjacent partial regions of the continuous interaction region.

Processes and systems that include one or more laser beam sources configured to provide laser irradiation with one or more laser pulse groups to at least a portion of powder particles on a solid surface at one or multiple locations thereof. Sintering laser pulse(s) is provided to induce coalition of at least some of the powder particles into a more continuous medium, and pressing laser pulse(s) is provided to produce pressure pulse(s) on at least a portion of the powder particles and/or the more continuous medium. Laser pulse groups may include one or more of the sintering laser pulses followed by one or more of the pressing laser pulses with a time delay between a last of the sintering laser pulse(s) and a first of the pressing laser pulse(s).