A substrate has a first surface with at least one division line formed thereon and a second surface opposite the first surface. The substrate is processed by applying a pulsed laser beam from the side of the first surface. The substrate is transparent to the pulsed laser beam. The pulsed laser beam is applied at least in a plurality of positions along the at least one division line, a focal point of the pulsed laser beam located at a distance from the first surface in the direction from the first surface towards the second surface, so as to form a plurality of modified regions inside the substrate. Each modified region is entirely within the bulk of the substrate, without any openings open to the first surface or the second surface. Substrate material is removed along the at least one division line where the modified regions are present.

Systems and techniques for processing materials using wavelength beam combining for high-power operation in concert with interferometry to detect the depth or height of features as they are created.

Disclosed is a system for efficiently cutting a transparent substrate. The system includes a laser source in optical communication with at least one multi-foci optical system. The laser source outputs at least one optical signal to the optical system. The optical system is positioned between the laser source and the substrate to be cut. The optical system includes at least one housing detachably coupled to at least one base member. One or more plate members having one or more apertures formed therein may be coupled to at least one of the housing, the baser member, or both. The aperture formed on the plate member may be configured to permit the optical signal to enter and exit the optical system. Various optical subassemblies may be positioned within or coupled to the optical system.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

The controllability of modified spots is improved. A laser processing apparatus 100 comprises a first laser light source 101 for emitting a first pulsed laser light L1, a second laser light source 102 for emitting a second pulsed laser light L2, half-wave plates 104, 105 for respectively changing directions of polarization of the pulsed laser light L1, L2, polarization beam splitters 106, 107 for respectively polarization-separating the pulsed laser light L1, L2 having changed the directions of polarization, and a condenser lens 112 for converging the polarization-separated pulsed laser light L1, L2 at an object to be processed 1. When the directions of polarization of the pulsed laser light L1, L2 changed by the half-wave plates 104, 105 are varied by a light intensity controller 121 in the laser processing apparatus 100, the ratios of the pulsed laser light L1, L2 polarization-separated by the polarization beam splitters 106, 107 are altered, whereby the respective intensities of the pulsed laser light L1, L2 are adjusted.

A system for cutting a substrate that is transparent within a predetermined range of wavelengths in the electromagnetic spectrum is provided that includes: a laser capable of emitting light along a light path and of a predetermined wavelength that is within the range of wavelengths in which the substrate is transparent; an optical element positioned in the light path of the laser such that the laser in conjunction with the optical element is capable of generating induced nonlinear absorption within at least a portion of the substrate; and an interface block composed of a material that is transparent over at least a portion of the predetermined range of wavelengths in the electromagnetic spectrum in which the substrate is also transparent. The interface block is positioned in the light path and between the substrate and the optical element. Further, the substrate will include an edge when extracted from a sheet.

A system for cutting a substrate that is transparent within a predetermined range of wavelengths in the electromagnetic spectrum is provided that includes: a laser capable of emitting light along a light path and of a predetermined wavelength that is within the range of wavelengths in which the substrate is transparent; an optical element positioned in the light path of the laser such that the laser in conjunction with the optical element is capable of generating induced nonlinear absorption within at least a portion of the substrate; and an interface block composed of a material that is transparent over at least a portion of the predetermined range of wavelengths in the electromagnetic spectrum in which the substrate is also transparent. The interface block is positioned in the light path and between the substrate and the optical element. Further, the substrate will include an edge when extracted from a sheet.

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

An ultraviolet laser 3D printing device includes a thermostat, a laser head, a non-contact type temperature monitoring device, a scanning galvanometer, a processing platform, a powder laying device, a material to be processed, a computer control system. The device is configured to perform the following functions: presetting a processing temperature by the control system; during the processing procedure, the temperature rise condition of the processed object is monitored by the non-contact type temperature monitoring device and fed back in real time to the control system; and by recording the rise value of the temperature within a certain period, the system can obtain the absorption capability of the laser and the temperature rise degree of the processed material, so that the laser output power can be calculated according to the preset processing temperature value, and the laser power can be adjusted in real time to precisely control the processing temperature.

Provided are a laser cutting device and a laser cutting method. The laser cutting device comprises a beam expanding element provided with a plurality of lens sets, wherein optical axes of the plurality of lens sets are located in the same line and each lens set comprises at least one lens; the beam expanding element is configured to convert an incident beam into a first beam; and a spectroscopic element arranged on a light path of an emitted light of the beam expanding element, and wherein the spectroscopic element is configured to convert the first beam into multiple second beams that are annular and spaced apart from each other.