An invisible laser system and an optical path visualization method thereof are disclosed. The invisible laser system comprises an invisible laser light generator for generating invisible laser light; a visible light generator for generating visible light; and an optical path visualization component arranged in optical paths of the invisible and visible light, and comprising a first and second incident end and a first outgoing end. The invisible laser light is incident on the first incident end, and the visible light is incident on the second incident end. All of the invisible laser light and at least part of the visible light are emitted in parallel with each other at the first outgoing end. All of the invisible laser light is present in a direction parallel with the optical path of the visible light, and no invisible laser light is present in other directions, so radiation risks are eliminated.

A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.

A welding equipment used to form two welding structures in two target locations of an electronic device is disclosed to include a laser generating device for generating a laser pulse beam, a radiation device scanning the two target locations, and an adjusting device equipped with a beam splitting system for receiving and processing the laser pulse beam. The beam splitting system separates the laser pulse beam into a reflected beam and a penetrating beam to control a radiation angle of the reflected beam and the penetrating beam, and project the reflected beam and the penetrating beam to the radiation device coaxially, so that the radiation device radiates the reflected beam and the penetrating beam coaxially to the two target locations to form the two welding structures. The radiation angle is related to relative positions of the two target locations.

The present disclosure disclosed an ultraviolet laser 3D printing method for the precise temperature control of polymer material and device thereof. The device comprises a thermostat, a laser head, a non-contact type temperature monitoring device, a scanning galvanometer, a processing platform, a powder laying device, a material to be processed, a computer control system and so on. The method comprises: presetting a processing temperature by the control system; during the processing procedure, the temperature rise condition of the processed object is monitored by the non-contact type temperature monitoring device and fed back in real time to the control system; and by recording the rise value of the temperature within a certain period, the system can obtain the absorption capability of the laser and the temperature rise degree of the processed material, so that the laser output power can be calculated according to the preset processing temperature value, and the laser power can be adjusted in real time to precisely control the processing temperature. By means of the above device and method, precise temperature control of ultraviolet laser 3D printing prototyping for polymer materials can be realized.

Systems and methods for laser processing systems and associated methods for using and manufacturing such systems are disclosed herein. In some embodiments, a laser processing system includes a controller, a laser source, a material support, and a beam delivery subsystem operably coupled to the controller. The beam delivery subsystem comprises an optical carriage assembly configured to receive and modify a laser beam from the laser source, and direct the laser beam toward a material to be processed carried by the material support. The optical carriage assembly is further configured to focus the laser beam within a material processing field to obtain an adjustable power density within a material processing plane and achieve an optimal selected condition for the material to be processed.

The invention concerns an apparatus and a method for laser processing. There is provided at least one first laser beam from at least one first optical feed fiber connected to at least one first laser device and at least one second laser beam from at least one second optical feed fiber connected to at least one second laser device. Said first and second laser beams are combined in a multi-core optical fiber. Said first core of said multi-core optical fiber has a circular cross-section, and said second core has an annular shape concentric to said first core. A composite laser beam comprising first and second output beams is directed from said multi-core optical fiber to a workpiece with overlapping elements to be welded.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

A method for the laser-based machining of a sheet-like substrate, in order to separate the substrate into multiple portions, in which the laser beam of a laser for machining the substrate is directed onto the latter, is characterized in that, with an optical arrangement positioned in the path of rays of the laser, an extended laser beam focal line, seen along the direction of the beam, is formed on the beam output side of the optical arrangement from the laser beam directed onto the latter, the substrate being positioned in relation to the laser beam focal line such that an induced absorption is produced in the material of the substrate in the interior of the substrate along an extended portion, seen in the direction of the beam, of the laser beam focal line, such that a material modification takes place in the material of the substrate along this extended portion.

A laser processing apparatus includes a process laser light source, a first optical system, a pulse laser light source, a second optical system, and an optical detection portion. The process laser light source generates a process laser beam having a continuous energy density during a certain period of time. The first optical system directs the process laser beam to a surface of a workpiece. The pulse laser light source generates a pulse laser beam having an energy density with a peak value that is higher than the energy density of the process laser beam. The second optical system directs the pulse laser beam to a process portion of the workpiece. The optical detection portion detects plasma light produced at the process portion of the workpiece.

The present invention relates to a laser apparatus using optical fibers for stable laser welding and a laser welding method using same. Hybrid ring mode-shaped laser beams, in which a central beam using fiber laser is positioned at the center of outer beams using diode laser, are used to perform welding by irradiating a to-be-welded portion of an object with the outer beams, the central beam, and the outer beams in this order. Thus, since the welding is performed using the central beam as a heat source in a state in which the to-be-welded portion of the object has been heated with a sufficient amount of heat input, the temperature gradient of the to-be-welded portion is low and solidification cracking does not occur. Also, problems such as spatter and voids can be minimized, and the laser welding is stable, and thus a quality of welding that is uniform and stable overall can be obtained.