A light source device including: a first light source configured to coaxially combine a plurality of first laser beams, each having a peak wavelength within a first wavelength range, to thereby generate and emit a first wavelength-combined beam; a second light source configured to coaxially combine a plurality of second laser beams, each having a peak wavelength within a second wavelength range that defines a range of peak wavelengths shorter than the peak wavelengths in the first wavelength range, to thereby generate and emit a second wavelength-combined beam; and a wavelength filter configured to coaxially combine the first wavelength-combined beam and the second wavelength-combined beam to thereby generate and emit a third wavelength-combined beam.

A system for and a method of processing a transparent material, such as glass, using an adjustable laser beam line focus are disclosed. The system for processing a transparent material includes a laser source operable to emit a pulsed laser beam, and an optical assembly (6′) disposed within an optical path of the pulsed laser beam. The optical assembly (6′) is configured to transform the pulsed laser beam into a laser beam focal line having an adjustable length and an adjustable diameter. At least a portion of the laser beam focal line is operable to be positioned within a bulk of the transparent material such that the laser beam focal line produces a material modification along the laser beam focal line. Method of laser processing a transparent material by adjusting at least one of the length of the laser beam focal line and the diameter of the laser beam focal line is also disclosed.

Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

The present disclosure relates to a laser system for processing a material. The system may make use of a laser configured to intermittently generate a first laser pulse of a first duration and a first average power, at a spot on a surface of the material being processed, and a second laser pulse having a second duration and a second peak power. The second duration may be shorter than the first duration by a factor of at least 100, and directed at the spot. The second laser pulse is generated after the first laser pulse is generated. The first laser pulse is used to heat the spot on the surface of the material, while the second laser pulse induces a melt motion and material ejection of molten material from the melt pool.

A laser processing apparatus of the present disclosure controls outputs of a blue laser oscillator and an infrared laser oscillator such that before a surface melting is detected on a workpiece, the workpiece is irradiated with at least blue laser light, and after the surface melting is detected on the workpiece, a power of infrared laser light with which the workpiece is irradiated is increased as compared to before the surface melting is detected.

Laser welding methods include focusing laser radiation onto a first metal sheet disposed on a metal part, optionally with one or more intervening metal sheets therebetween. The laser radiation is steered to trace at least one spiral path to spot-weld together the metal parts. The laser radiation includes a center beam and an annular beam to maintain a stable keyhole. One method is tailored to weld aluminum parts, e.g., with high gas content and/or dissimilar compositions, and the laser radiation traces first an outward spiral path and then an inward spiral path. The center beam is pulsed during one segment of the inward spiral path. Another method is tailored to weld steel or copper parts having a coating at an interface therebetween, and the laser radiation traces an inward spiral path. The interface may be a zero-gap interface, or a non-zero gap may exist.

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

The disclosure relates to methods and systems for deep welding a workpiece, a surface of the workpiece being irradiated by a first laser beam and a second laser beam. In a workpiece surface plane (OE) a first beam width B1 of the first laser beam is larger than a second beam width B2 of the second laser beam and in at least the workpiece surface plane (OE) the second laser beam lies inside the first laser beam. The intensity of the first laser beam alone is sufficient to produce a keyhole in the workpiece. The keyhole produced in the workpiece has a width KB in the workpiece surface plane (OE), KB substantially equaling B1, and B2≤0.75*KB. The methods and systems provide good seam quality, high penetration depth, and high welding speed.

A method for laser keyhole welding of metal alloys is disclosed. The method independently adjusts power in a focused center beam and power in a concentric focused annular beam. At the termination of a weld, the power in the center beam is initially ramped up and then ramped down, while the power in the annular beam is ramped down. Increasing the power in the center beam enables a controlled and prolonged contraction of the keyhole and melt pool, thereby preventing undesirable cracking.