A processing apparatus includes: a beam irradiation apparatus that is configured to irradiate an object with an energy beam; and a beam deflection apparatus that is configured to change a propagating direction of the energy beam toward the beam irradiation apparatus, wherein when the energy beam propagating toward the beam irradiation apparatus from the beam deflection apparatus propagates in a first direction, the beam irradiation apparatus emits the energy beam in a second direction, and when the energy beam propagating toward the beam irradiation apparatus from the beam deflection apparatus propagates in a third direction that is different from the first direction, the beam irradiation apparatus emits the energy beam in a fourth direction that is different from the second direction.

A laser processing apparatus includes a laser source; a width adjuster that adjusts a width of a laser beam irradiated from the laser source; and a scanner that adjusts an irradiation direction of the laser beam having passed through the width adjuster, wherein the width adjuster includes a first width adjusting portion and a second width adjusting portion arranged on a traveling direction of the laser beam, a focal length of the first width adjusting portion is equal to or greater that about 20,000 mm and a focal length of the second width adjusting portion is equal to or greater than about 20,000 mm.

Apparatus and methods for forming fine scale structures (4, 4′, 4″, 5, 6, 7, 8) in the surface of a dielectric substrate (3) to two or more depths are disclosed. In an example, the apparatus comprises a first solid state laser (12) arranged to provide a first pulsed laser beam (13), a first mask (16) having a pattern for defining a first set of structures (4, 6, 7, 8) at a first depth, a projection lens (17) for forming a reduced size image of said pattern on the surface (3) of the substrate and a beam scanner arranged to scan said first pulsed laser beam (13) in a two-dimensional raster scan relative to the first pattern to form a first set of structures (4, 6, 7, 5) at a first depth in the substrate, wherein the first or a further solid state laser is arranged to form a second set of structures (8) at a second depth in the substrate (3).

The disclosure relates to a beam-forming unit for forming a laser beam and focusing the laser beam onto a workpiece. The unit includes a movable component, an immovable component, and a cooling system configured for movement of a cooling medium to actively cool the movable component. The cooling system has-a cooling water circuit on the immovable component configured for water cooling of both the immovable component and the cooling medium.

A stealth dicing laser device including: a pulse laser generator configured to generate laser light; a condenser lens formed in an optical path of the laser light; a pupil filter configured to transform a phase of the laser light before the laser light passes through the condenser lens; and a controller configured to provide a phase control signal to the pupil filter, wherein the pupil filter transforms the phase of the laser light based on the phase control signal, wherein the phase control signal is a signal transforming a phase expression of the laser light based on a parameter.

A high resolution system for additive manufacturing, soldering, welding and other laser processing applications. A blue laser system for additive manufacturing, soldering, welding and other laser processing applications and operation for additive manufacturing of materials.

A visible light laser system and operation for welding materials together. A blue laser system and operation for welding conductive elements, and in particular thin conductive elements, together for use in energy storage devices, such as battery packs.

The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.

A laser welding system is provided. The laser welding system includes a laser source configured to produce a laser beam, beam shaping means configured to form a beam profile different from that of the laser beam, and shielding means configured to shield at least a portion of the shaped beam profile.

Laser processing head (20) of the present disclosure includes housing (30), transparent protector (40), and temperature sensor (70). Housing (30) includes an optical path of processing laser light (LB). Transparent protector (40) is detachably fixed to housing (30), passes processing laser light (LB), and suppresses dust of work material (W) entering into housing (30). Here, the dust is generated from the work material (W) irradiated with processing laser light (LB). Temperature sensor (70) detects the temperature of transparent protector (40).