A method of forming a cutting element for an earth-boring tool may include directing at least one energy beam at a surface of a volume of polycrystalline superabrasive material including interstitial material disposed in regions between inter-bonded grains of polycrystalline superabrasive material. The method includes ablating the interstitial material with the at least one energy beam such that at least a portion of the interstitial material is removed from a first region of the volume of polycrystalline superabrasive material without any substantial degradation of the inter-bonded grains of superabrasive material or of bonds thereof in the first region.

A method for separating a workpiece along a separation line by using laser pulses of a laser beam includes splitting the laser beam into a plurality of partial laser beams using a beam splitter optical unit, focusing the plurality of partial laser beams onto a surface of the workpiece and/or into a volume of the workpiece using a focusing optical unit, so that the plurality of partial laser beams are arranged next to one another and spaced apart from one another along the separation line, and ablating material of the workpiece along the separation line by introducing the laser pulses of the plurality of partial laser beams into the workpiece. The laser power per partial laser beam is adjusted depending on an ablation depth obtained in the workpiece.

An apparatus for cutting brittle material comprises an aspheric focusing lens, an aperture, and a laser-source generating a beam of pulsed laser-radiation. The aspheric lens and the aperture form the beam of pulsed laser-radiation into an elongated focus having a uniform intensity distribution along the optical axis of the aspheric focusing lens. The elongated focus extends through the full thickness of a workpiece made of a brittle material. The workpiece is cut by tracing the optical axis along a cutting line. Each pulse or burst of pulsed laser-radiation creates an extended defect through the full thickness of the workpiece.

An additive manufacturing system includes a laser array including a plurality of laser devices. Each laser device of the plurality of laser devices generates an energy beam for forming a melt pool in a powder bed. The additive manufacturing system further includes at least one optical element. The optical element receives at least one of the energy beams and induces a predetermined power diffusion in the at least one energy beam.

A manufacturing process of an element chip comprises a preparing step for preparing a substrate having first and second sides opposed to each other, the substrate containing a semiconductor layer, a wiring layer and a resin layer formed on the first side, and the substrate including a plurality of dicing regions and element regions defined by the dicing regions. Also, the manufacturing process comprises a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions. Further, the manufacturing process comprises a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips. The laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions.

A laser beam applying unit of a laser processing apparatus for processing a wafer includes a laser oscillator for emitting a pulsed laser beam having a wavelength transmittable through the wafer, a beam condenser for converging the pulsed laser beam emitted from the laser oscillator onto the wafer held on a chuck table, a beam splitter assembly disposed between the laser oscillator and the beam condenser, for splitting the pulsed laser beam emitted from the laser oscillator to form at least two converged spots on the wafer that are spaced from each other in X-axis directions, and a mask assembly disposed between the laser oscillator and the beam condenser, for reducing the width of the converged spots on the wafer in Y-axis directions to keep the converged spots on the wafer within the width of the projected dicing lines on the wafer.

The inventive concept provides a mask treating method. The mask treating method includes treating a mask by supplying a liquid to the mask, and irradiating a laser to a region of the mask on which a specific pattern is formed while the liquid remains on the mask; moving an optical module including a laser unit configured to irradiate the laser between a process position for treating the substrate and a standby position deviating from the process position; and adjusting a state of the optical module at an inspection port provided at the standby position to a set condition before the optical module is moved to the process position.

A processing apparatus is equipped with: a first stage system that has a table on which a workpiece is placed and moves the workpiece held by the table; a beam irradiation system that includes a condensing optical system to emit beams; and a controller to control the first stage system and the beam irradiation system, and processing is performed to a target portion of the workpiece while the table and the beams from the condensing optical system are relatively moved, and at least one of an intensity distribution of the beams at a first plane on an exit surface side of the condensing optical system and an intensity distribution of the beams at a second plane whose position in a direction of an optical axis of the condensing optical system is different from the first plane can be changed.

In various embodiments, one or more optical elements are utilized to alter the numerical aperture of a radiation beam received from an optical fiber in order to accommodate the properties of a downstream collimator within a laser delivery head.

Laser processing head 10 includes housing 11 and a plurality of optical components. Housing 11 is provided with partition wall 11a, first and second light entrance ports 12a, 12b through which first and second laser beams A, B respectively enter, and light irradiation port 13. Laser processing head 10 includes first and second photodetectors 91b, 92a provided around first and second light entrance ports 12a, 12b, respectively. First photodetector 91b is disposed opposite to second photodetector 92a across partition wall 11a. First photodetector 91b receives light in the second wavelength band including the wavelength of second laser beam B, and second photodetector 92a receives light in the first wavelength band including the wavelength of first laser beam A.