An additively manufactured (AM) object may include a body including an opening in an exterior surface thereof, the opening having a shape and a first area at the exterior surface of the body. A mask may be positioned over the opening. The mask has the shape of the opening and a second area that is larger than the first area so as to overhang the exterior surface of the body about the opening. A plurality of support ligaments couple to the mask and the exterior surface of the body at a location adjacent to the opening to support a portion of the mask. A coating can be applied to the object, and the mask removed. The final AM object includes a plurality of ligament elements extending from the exterior surface of the body and through the coating adjacent the opening, each ligament element at least partially surrounded by the coating.

A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.

An apparatus and a method for thermal processing within a processing region (1) at a workpiece surface (2) by means of a laser beam (6) emitted by at least one radiation source (5). Arranged in the beam path of the laser beam (6) between the at least one radiation source (5) and the processing region (1) on the workpiece surface (2), there is at least one element (10, 11, 12) by means of which the intensity of the laser beam (6) is modifiable in a locally defined manner within the processing region (1). As an alternative or in addition thereto, the intensity of at least one of the laser beams (6) is modifiable in a locally defined manner within the processing region (1) by a defined actuation of the plurality of radiation sources (5) such that a locally defined distribution of the intensity of the laser beam (6) striking the workpiece surface (2) is achievable within the processing region (1).

An apparatus and a method for thermal processing within a processing region (1) at a workpiece surface (2) by means of a laser beam (6) emitted by at least one radiation source (5). Arranged in the beam path of the laser beam (6) between the at least one radiation source (5) and the processing region (1) on the workpiece surface (2), there is at least one element (10, 11, 12) by means of which the intensity of the laser beam (6) is modifiable in a locally defined manner within the processing region (1). As an alternative or in addition thereto, the intensity of at least one of the laser beams (6) is modifiable in a locally defined manner within the processing region (1) by a defined actuation of the plurality of radiation sources (5) such that a locally defined distribution of the intensity of the laser beam (6) striking the workpiece surface (2) is achievable within the processing region (1).

The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

Embodiments relate to a transfer device of a semiconductor light emitting device and a display device of a semiconductor light emitting device using the same.

A semiconductor light emitting device transfer device according to an embodiment can include a line beam laser generating device and a through-type glass mask disposed on a semiconductor substrate including a predetermined semiconductor light emitting device.

The line beam laser 210 generated by the line beam laser generator can pass through the through-type glass mask to selectively transfer the semiconductor light emitting device on the semiconductor substrate onto a predetermined panel substrate.

A method of calibrating a laser galvanometer to an XY stage by directing a defocused laser beam through a galvanometer and onto an XY stage and re-centering the laser beam at subsequent positions on the XY stage. Offsets are calculated based on the required movement of the galvanometer to recenter the laser beam at each of the positions on the XY stage. The laser beam may be defocused by focusing the laser beam at a distance Z both above or below the XY stage for each position and then calculating the offset for each position by averaging the values calculated at the focus distances Z above and below the XY stage. The laser beam may also be defocused by passing it through a pinhole.

A method of calibrating a laser galvanometer to an XY stage by directing a defocused laser beam through a galvanometer and onto an XY stage and re-centering the laser beam at subsequent positions on the XY stage. Offsets are calculated based on the required movement of the galvanometer to recenter the laser beam at each of the positions on the XY stage. The laser beam may be defocused by focusing the laser beam at a distance Z both above or below the XY stage for each position and then calculating the offset for each position by averaging the values calculated at the focus distances Z above and below the XY stage. The laser beam may also be defocused by passing it through a pinhole.

Provided herein are embodiments of systems and methods for imparting a pattern or representation to a device using interference pattern ablation.

The present invention relates to a method of laser processing a glass substrate, the method comprising: focusing a pulsed laser beam into a laser beam focal line into the glass substrate, the glass substrate having a feature formed on a first surface of the glass substrate, wherein a first portion of the laser beam focal line is focused at the first surface of the glass substrate and a second portion of the laser beam focal line is focused at a second surface of the glass substrate that is opposite the first surface, wherein a first set of rays exiting the optical arrangement at a first radius R1, as measured from a center of the optical arrangement forms the first portion of the laser beam focal line with a deflection angle of θ.sub.1, wherein a second set of rays exiting the optical arrangement at a second radius R2, as measured from the center of the optical arrangement forms the second portion of the laser beam focal line with a deflection angle of θ.sub.2, wherein R1 is less than R2; and wherein θ.sub.1 is greater than θ.sub.2, and wherein θ.sub.1 decreases to θ.sub.2 from R1 to R2 in one of a step-wise decrease or a graded decrease; and translating the glass substrate and the laser beam relative to each other along a first contour, thereby laser forming a plurality of defect lines along the first contour within the substrate.