A device for cutting human or animal tissue including a femtosecond laser that can emit a L.A.S.E.R. beam in the form of impulses. The device directs and focuses the beam onto or into the tissue for the cutting thereof. The device further includes and element to shape the L.A.S.E.R. beam, positioned in the trajectory of the beam, and to modulate the energy distribution of the L.A.S.E.R. beam in the focal plane thereof, corresponding to the cutting plane.

A method and a laser assemblage are described for material processing, such that in a laser assemblage, a laser beam is focused onto a processing/imaging plane and the laser beam can be adapted in terms of its intensity distribution by way of at least one beam shaper. Provision is made in this context that in order to avoid uniformity defects in the processing/imaging plane, the laser beam is split by way of at least one beam splitter into at least two partial or individual beams, and the partial or individual beams are differently influenced, or each partial or individual beam is constituted from a laser source having a different wavelength, in such a way that after they are combined and focused onto the processing/imaging plane they form an output beam having an intensity profile, adjacent intensity maxima of the intensity profile differing in terms of their light properties. It is thereby possible to prevent the occurrence of obtrusive interference so that obtrusive speckle patterns are largely eliminated, with the result that beam shaping quality, in particular for laser processing processes, can be considerably improved.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

A system for LAM that uses a scalable array of individually controllable laser beams that are generated by a fiber array system to process materials into an object using a powder bed, wire feed, or direct deposition. The adaptive control of individual beams may include beam power, focal spot width, centroid position, scanning orientation, amplitude and frequency, piston phase and polarization states of individual beams. These characteristics can be independently adjusted to control LAM characteristics including microstructure, mechanical and surface quality characteristics. The system may also have a set of material sensors that gather information on a material and environment immediately before, during, and immediately after processing. This information can be used to adapt the material processing routine to improve LAM productivity and parts quality. The system also supports a variety of beam shaping methods that improve the quality of produced objects or mitigate processing issues.

A laser processing device comprising: an optical arrangement; wherein the optical arrangement comprises an input for receiving a laser beam; wherein the optical arrangement comprises a beam splitter that splits the laser beam into at least two partial beams; wherein the optical arrangement recombines the partial beams into a laser spot for generating an interference pattern in the laser spot; wherein a first state of the laser beam at the input generates a first interference pattern and a second state of the laser beam generates a second interference pattern; wherein the first state and the second state differ in at least one of (i) a position of the laser beam at the input and (ii) an angle of incidence of the laser beam with respect to the input; and wherein the optical arrangement is configured such that the second interference pattern continues the first interference pattern in phase.

An apparatus for manufacturing a deposition mask including a stage on which a mask substrate is mounted, a light source configured to irradiate a laser beam, a beam splitter configured to split the irradiated laser beam into a plurality of laser beams, a scanner configured to simultaneously scan the plurality of laser beams onto the mask substrate, and a tuner configured to finely change irradiation states of the plurality of laser beams to correspond to shapes of a plurality of pattern holes, while the plurality of laser beams are scanned.

A weldment manufacturing method includes drilling that forms a hole on a workpiece, feeding a filler material to the hole and putting the filler material on a bottom of the hole, and melting the filler material by emitting a laser beam to the hole while scanning with the laser beam, so as to fill the hole with the melted filler material. By repeating the feeding and the melting, a weld repairing portion filling the hole is formed.

A method for laser processing of a workpiece includes splitting a pulsed laser beam among a plurality of partial beams. Each partial beam has one of two different polarization states. The method further includes processing the workpiece by focusing the plurality of partial beams into a plurality of at least partially overlapping partial regions of a continuous interaction region. Partial beams having different polarization states are focused into adjacent partial regions of the continuous interaction region.

A method for butt-welding of sheet metal, especially bodywork in the motor vehicle industry, where at least two flat workpieces with any desired contours are fed to a machining process. In a first sub-process, the workpieces are positioned in relation to one another forming a minimal gap and secured in place with holding means. In another sub-process, the position and width of the gap are measured continuously immediately before welding together and the measurements are used to control a laser welding head. The laser welding head is fit with a rotatable twin-spot lens, where the relative alignment of a main spot to an auxiliary spot is controlled depending on the absolute position of the gap and the gap width during the welding process while the processing lens of the laser welding head is rotated around the laser beam axis with the angle of rotation alpha.

An adjustment method of laser light path includes the steps of: having a laser light path to penetrate through a measuring device to obtain at least two laser focal positions of the laser light path, the at least two laser focal positions forming an arc path; applying a focal position-calculating device to calculate coordinate values of the at least two laser focal positions; based on the arc path and the coordinate values of the at least two laser focal positions to apply the focal position-calculating device to calculate a target laser focal position; and, based on the target laser focal position to apply a light modulator to adjust each of the at least two laser focal positions to the target laser focal position. In addition, an adjustment device of laser light path is also provided.