B23K26/0732

Method for Manufacturing a Component by Means of Layered Construction

The invention relates to a method for producing a component by means of layered construction, by combining a plurality of crystallites of a metallic material to form a single crystal. The single crystal is formed by thermomechanically activated successive anisotropic plastic deformation. The metallic material is heated during the construction of a new layer, with the result that the metallic material is melted in a linear region. The linear region is moved in order to construct the new layer.

APPARATUS, METHOD, AND COMPUTER PROGRAM PRODUCT FOR FUSING A WORKPIECE
20180345377 · 2018-12-06 ·

Provided is an apparatus that includes a high energy beam configured to make a first weld at a first position on a workpiece; at least one deflection lens configured to deflect the high energy beam so as to cause the high energy beam to make a second weld at a second position; at least one focusing lens configured to focus the high energy beam; at least one astigmatism lens; and at least one controller. The controller is configured to shape the high energy beam so that the shape of the high energy beam on the workpiece is longer in a direction parallel to a deflection direction of the high energy beam than in a direction perpendicular to the deflection direction of the high energy beam. A length ratio is varying as a function of the power of the energy beam, while the width in the perpendicular direction is constant.

LASER DOPING DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

A laser doping device includes: a solution supply system configured to supply a solution containing dopant to a doping region; a pulse laser system configured to output pulse laser light including a plurality of pulses, the pulse laser light transmitting through the solution; a first control unit configured to control a number of pulses of the pulse laser light for allowing the doping region to be irradiated, and to control a fluence of the pulse laser light in the doping region; and a second control unit configured to control a flow velocity of the solution so as to move bubbles, from the doping region, occurring in the solution every time of irradiation with the pulse.

SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating method includes removing a portion of the thin film by irradiating a laser to the substrate, and after the removing of the portion of the thin film, removing the remaining portion of the thin film by supplying a chemical to the substrate.

Optical device and excimer laser annealing equipment

The embodiments of the present disclosure provide an optical device and an excimer laser annealing equipment. The optical device includes: a light source; a transparent window spaced apart from the light source by a distance; and an optical system disposed between the light source and the transparent window. The transparent window is configured such that emergent light of the light source is vertically incident onto the transparent window after passing through the optical system.

Creation of hyperdoped semiconductors with concurrent high crystallinity and high sub-bandgap absorptance using nanosecond laser annealing

In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance.

Laser irradiation apparatus

A laser irradiation apparatus may include: an irradiation head section including first and second irradiation heads each configured to perform laser light irradiation on a workpiece; a laser unit section including first and second laser units configured to respectively output first laser light and second laser light; a beam delivery section provided in an optical path between the laser unit section and the irradiation head section, and configured to perform switching of optical paths between optical paths of the first laser light and the second laser light to cause the first or second laser light to enter the first or second irradiation head; a first beam property varying section provided in an optical path between the first laser unit and the irradiation head section; and a second beam property varying section provided in an optical path between the second laser unit and the irradiation head section.

FIBER-COUPLED LASER WITH TIME VARYING BEAM CHARACTERISTICS
20180287328 · 2018-10-04 ·

Methods, apparatus, and systems comprising a fiber-coupled laser and time-varying beam characteristics. A laser may generate an optical beam that is launched into one or more lengths of fiber, at least one of which comprises a confinement region that is optically coupled to an output. A perturbation device may modulate, through action upon the one or more lengths of fiber, a beam characteristic over a time period during which the laser is energized. A controller may cause the perturbation device to act upon the one or more lengths of fiber to impart a time-averaged beam characteristic and/or to induce a continuous variation in one or more beam characteristics during system use. A process monitor may sense a metric external to the optical system, and a feedback signal from the process monitor may be coupled into the controller. Dynamic beam characteristics may be modulated based on the feedback signal.

DYNAMIC ASPECT RATIO RECTANGULAR LASER BEAMS

An optical beam delivery device includes: a first length of fiber having a first refractive index profile (RIP) to enable modification of one or more beam characteristics of an optical beam having a first beam shape; an a second length of fiber having at least one beam-shaping confinement region and situated to receive the optical beam from the first length of fiber, wherein the at least one beam shape-modifying confinement region has a quadrilateral cross-section.

MULTI-FUNCTION SEMICONDUCTOR AND ELECTRONICS PROCESSING

A method of tailoring beam characteristics of a laser beam during fabrication of an electronic device. The method includes: providing a substrate comprising one or more layers; adjusting one or more characteristics of a laser beam; and impinging the laser beam having the adjusted beam characteristics on the substrate to carry out at least one process step for fabricating the electronic device. The adjusting of the laser beam comprises: perturbing the laser beam propagating within a first length of fiber to adjust the one or more beam characteristics of the laser beam in the first length of fiber or a second length of fiber or a combination thereof, the second length of fiber having two or more confinement regions; coupling the perturbed laser beam into the second length of fiber; and emitting the laser beam having the adjusted beam characteristics from the second length of fiber.