B23K26/0732

Laser doping device and semiconductor device manufacturing method

A laser doping device includes: a solution supply system configured to supply a solution containing dopant to a doping region; a pulse laser system configured to output pulse laser light including a plurality of pulses, the pulse laser light transmitting through the solution; a first control unit configured to control a number of pulses of the pulse laser light for allowing the doping region to be irradiated, and to control a fluence of the pulse laser light in the doping region; and a second control unit configured to control a flow velocity of the solution so as to move bubbles, from the doping region, occurring in the solution every time of irradiation with the pulse.

Laser processing apparatus

A laser processing apparatus includes: a stage 2 capable of levitating and transporting a substrate 3 by jetting gas from a front surface; a laser oscillator configured to irradiate a laser beam 20a onto the substrate 3; and a gas jetting port arranged at a position overlapping a focus point position of the laser beam 20a in plan view, and being configured to jet inert gas. The front surface of the stage 2 is constituted by upper structures 5a and 5b, and the upper structures 5a and 5b are arranged so as to be spaced apart from each other and face each other. A gap between the upper structures 5a and 5b overlaps the focus point position of the laser beam 20a in plan view. A filling member 8 is arranged between the upper structures 5a and 5b so as to fill the gap between the upper structures 5a and 5b.

ADDITIVE MANUFACTURING SYSTEMS AND METHODS

Aspects described herein relate to additive manufacturing systems and related methods. An additive manufacturing system may include two or more laser energy sources and associated optical fibers. An optics assembly may be constructed and arranged to form a rectangular laser energy pixel associated with each laser energy source. Each pixel may have a substantially uniform power density, and the pixels may be arranged to form a linear array of laser energy pixels on a build surface with no spacing between the pixels. Exposure of a portion of a layer of material on the build surface to the linear array of laser energy pixels may melt the portion of the layer.

ADDITIVE MANUFACTURING DEVICE

An additive manufacturing device includes: an inner light beam radiation device of radiating an inner light beam; an outer light beam radiation device of radiating an outer light beam; and a control device. when a molten pool is irradiated with the outer light beam, the control device controls a power density of the outer light beam representing an output per unit area such that a cooling rate of the molten pool representing a temperature drop per unit time is 540? C./s or less at a freezing point of a carbide binder included in the molten pool, the molten pool being formed by irradiating a material including a hard material and a carbide binder with the inner light beam to melt the material. According to the present disclosure, the additive manufacturing device can prevent cracking and additively manufacture a high-quality shaped object with a simple configuration.

Laser irradiation method and laser irradiation apparatus

The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.

Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device

The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Laser irradiation method and apparatus

A laser irradiation method sets scan lines in an x direction in parallel, and in a y direction to be separate by an inter-scan-line distance Py corresponding to laser irradiation areas of a processing target object, orients a length direction of a linear laser spot with length Wy and width Wx in the y direction, and irradiates target object with the laser spot in each of irradiation positions arranged at width direction intervals while moving the laser spot relative to the target object along the scan lines. The method includes determining the inter-scan-line distance Py, the width direction interval , and a position shift quantity x (where, 0<x<) so that the irradiation positions on adjacent scan lines are shifted in the x direction by the position shift quantity x and a cumulative value of the applied laser intensity is substantially equalized.

LASER IRRADIATION APPARATUS, LASER IRRADIATION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A laser irradiation apparatus (1) according to one embodiment includes a laser generating device (14) that generates a laser beam, a flotation unit (10) that causes a workpiece (16) that is to be irradiated with the laser beam to float, and a conveying unit (11) that conveys the floating workpiece (16). The conveying unit (11) conveys the workpiece (16) with the conveying unit (11) holding the workpiece (16) at a position where the conveying unit (11) does not overlap an irradiation position (15) of the laser beam. The laser irradiation apparatus (1) according to one embodiment makes it possible to suppress uneven irradiation with a laser beam.

LASER IRRADIATION APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR OPERATING LASER IRRADIATION APPARATUS
20190189449 · 2019-06-20 ·

A laser annealing apparatus (1) according to an embodiment includes a laser oscillator (4) configured to generate a laser beam (L), a floating-type conveying stage (3) configured to float and convey a workpiece (W) to be irradiated with the laser beam (L), and a beam profiler (7) configured to measure a beam profile of the laser beam (L). The floating-type conveying stage (3) includes a conveying surface (3a) opposed to the workpiece (W), and a bottom surface (3b) on the side opposite to the conveying surface (3a). The beam profiler (7) is positioned below the bottom surface (3b) of the floating-type conveying stage (3). The floating-type conveying stage (3) includes a detachable part (12) in a part of it. An opening (S) is formed by detaching the detachable part (12) from the floating-type conveying stage (3), the opening (3) extending from the conveying surface (3a) to the bottom surface (3b). The beam profiler (7) is configured to measure the beam profile of the laser beam (L) through the opening (S).

OPTIMIZED-COVERAGE SELECTIVE LASER ABLATION SYSTEMS AND METHODS

Optimized-coverage selective laser ablation systems and methods may be utilized to prepare (ablate) a three-dimensional surface. Methods comprise receiving a 3D virtual model of the surface to be ablated, generating a preliminary ablation path, and optimizing the preliminary ablation path to produce an adapted ablation path. Methods may comprise ablating the surface according to the adapted ablation path. The preliminary ablation path may be based on scanning a laser sheet across a two-dimensional projection of the surface. The optimization may adjust one or more waypoints of the preliminary ablation path to achieve complete coverage of the surface at acceptable levels of ablation, with little to no ablation outside the surface, and with acceptable (e.g., at least locally minimal) time to ablate the surface.