A component is fabricated in an additive manufacturing process. Only a portion of a first layer of a first material is at least partially melted to define a first component layer of the component. Only a portion of the second layer of a second material is at least partially melted to define a second component layer of the component in which the entirety of the second component layer is formed simultaneously, and the second component layer is attached to the first component layer.

A laser processing apparatus includes a laser beam applying unit for applying a laser beam to a workpiece, an image capturing unit for producing a captured image of the workpiece that includes a captured image of light emitted from the workpiece when the laser beam is applied to the workpiece by the laser beam applying unit, and a control unit. The laser beam applying unit includes a laser oscillator for emitting a laser beam and a condensing lens for converging the laser beam onto the workpiece. The control unit includes a determining section for determining a state of the laser beam applied to the workpiece, on the basis of the shape of the captured image of the light that is included in the captured image of the workpiece.

A semiconductor member manufacturing method includes a laser processing step of forming a converging spot of laser light in an object including a semiconductor while relatively moving the converging spot with respect to the object along a line extended in a circular shape when viewed from a Z direction intersecting with an incident surface of the laser light in the object, thereby forming a modified region and a fracture extended from the modified region along the line in the object, and a separation step of, after the laser processing step, separating a part of the object using the modified region and the fracture as a boundary, thereby forming a semiconductor member from the object.

A line beam irradiation apparatus (1000) includes a work stage (200), a line beam source (100) for irradiating a work (300) placed on the work stage (200) with a line beam; and a transporting device (250) for moving at least one of the work stage (200) and the line beam source (100) such that an irradiation position of the line beam on the work moves in a direction transverse to the line beam. The line beam source includes a plurality of semiconductor laser devices and a support for supporting the plurality of semiconductor laser devices. The plurality of semiconductor laser devices are arranged along a same line extending in a fast axis direction, and the laser light emitted from emission regions of respective ones of the semiconductor laser devices diverge parallel to the same line to form the line beam.

A method of fabricating an optical element comprises providing a substrate of a transparent material; and applying one or more focused femtosecond pulses of laser light with an elliptical polarisation to a volume within the substrate to create at least one nanostructure in the volume.

A laser processing apparatus includes a support portion, a first laser processing head, a second laser processing head, a first vertical movement mechanism, a second vertical movement mechanism, a first horizontal movement mechanism, a second horizontal movement mechanism, and a controller configured to control rotation of the support portion, emission of a first and a second laser lights from the first and the second laser processing heads, and movement of a first and a second focusing points.

Systems and methods for additive manufacturing, and, in particular, such methods and apparatus as employ pulsed lasers or other heating arrangements to create metal droplets from donor metal micro wires, which droplets, when solidified in the aggregate, form 3D structures. A supply of metal micro wire is arranged so as to be fed towards a nozzle area by a piezo translator. Near the nozzle, an end portion of the metal micro wire is heated (e.g., by a laser pulse or an electric heater element), thereby causing the end portion of the metal micro wire near the nozzle area to form a droplet of metal. A receiving substrate is positioned to receive the droplet of metal jetted from the nozzle area.

The present disclosure relates to a laser based system for laser peening a workpiece. The system has a pulse laser configured to generate laser pulses and a controller for controlling operation of the pulse laser. The controller is further configured to control the pulse laser to cause the pulse laser to generate at least one of the laser pulses with a spatio-temporally varying laser fluence over a duration of the at least one of the laser pulses.

A method for separating a workpiece having a transparent material includes providing ultrashort laser pulses using an ultrashort pulse laser, introducing material modifications into the transparent material of the workpiece along a separation line, and separating the material of the workpiece along the separation line. The laser pulses form a laser beam that is incident onto the workpiece at a work angle. The material modifications are Type III modifications associated with a formation of cracks in the material of the workpiece. The material modifications penetrate two sides of the workpiece that are located in intersecting planes. Separating the material of the workpiece produces a chamfer and/or a bevel. A length of a hypotenuse of the chamfer and/or bevel is between 50 μm and 5000 μm.

A method of processing a wafer includes removing a functional layer on projected dicing lines, thereby exposing a substrate, and cutting the wafer along the projected dicing lines where the substrate is exposed, thereby fabricating individual device chips. A laser applying apparatus includes a beam branching unit for branching a laser beam spot into at least two slender spots spaced from each other in a processing direction along the projected dicing lines, and orienting longer sides of the slender spots transversely across the projected dicing lines and shorter sides of the slender spots in the processing direction. A wafer region processed by the laser beams is expanded by moving the at least two slender spots from the beam branching unit in such a manner as to make the longer sides of the slender spots shifted in opposite directions transversely across the projected dicing lines.