Methods and apparatuses for additive manufacturing are described. A method for additive manufacturing may include exposing a layer of material on a build surface to one or more projections of laser energy including at least one line laser having a substantially linear shape. The intensity of the line laser may be modulated so as to cause fusion of the layer of material according to a desired pattern as the one or more projections of laser energy are scanned across the build surface.

A laser processing apparatus includes: a chuck table that holds a workpiece; a laser beam applying unit that applies a pulsed laser beam having a predetermined line width to the workpiece held by the chuck table; and a processing feeding unit that performs relative processing feeding of the chuck table and the laser beam applying unit. The laser beam applying unit includes: a laser oscillator that oscillates the pulsed laser beam; a focusing device that focuses the pulsed laser beam oscillated by the laser oscillator; and a pulse width adjustment unit that is disposed between the laser oscillator and the focusing device and that generates a time difference in a wavelength region of the pulsed laser beam in the predetermined line width, thereby adjusting the pulse width.

A laser apparatus may include a spectrum controller and a spectrum modulator. The spectrum controller may control a center wavelength and/or a bandwidth of a spectrum of a laser beam. The spectrum modulator may modulate the spectrum of the laser beam having the center wavelength and/or the bandwidth controlled by the spectrum controller. Thus, the laser beam may have the spectrum optimal for a semiconductor fabrication process. Particularly, the substrate may be accurately diced using the laser beam having the optimal spectrum.

The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

A method for laser processing a transparent workpiece includes focusing a pulsed laser beam output by a pulsed laser beam source into a pulsed laser beam focal line directed into the transparent workpiece, thereby forming a pulsed laser beam spot on the transparent workpiece and producing a defect within the transparent workpiece, directing an infrared laser beam output onto the transparent workpiece to form an annular infrared beam spot that circumscribes the pulsed laser beam spot at the imaging surface and heats the transparent workpiece. Further, the method includes translating the transparent workpiece and the pulsed laser beam focal line relative to each other along a separation path and translating the transparent workpiece and the annular infrared beam spot relative to each other along the separation path synchronous with the translation of the transparent workpiece and the pulsed laser beam focal line relative to each other.

The invention relates to an ablative production device and method for a periodic line structure on a workpiece. The device comprises a pulsed laser for generating ablative light, a phase mask arranged in the beam path of the ablative light, imaging optics arranged on an optical axis and a holder to hold the workpiece in an image plane. The phase mask produces a plurality of equidistant parallel lines in an object plane by interference and suppresses an order of diffraction parallel to the optical axis. The optical axis is perpendicular to the object plane. The imaging optics comprises a cylindrical lens, which is aligned in parallel to the lines and is designed to image the object plane into the image plane.

Embodiments of a method of scribing a ceramic material are provided. In the method, a ceramic material having a thickness of 500 m or less between a first outer surface and a second outer surface is provided. The second outer surface is opposite the first outer surface. A beam focal line is directed at the ceramic material, and the beam focal line has a length over which its intensity is greater than a damage threshold of the ceramic material. The length is longer than the thickness of the ceramic material. Further, a damage track defining at least a first section of the ceramic material and a second section of the ceramic material is created by moving the beam focal line relative to the ceramic material. Also provided are embodiments of a laser scribed component and embodiments of a laser scribed ceramic substrate.

In a method for producing a structured seed layer for carbon nanotubes to be deposited thereon, energy is applied by means of a laser beam to a metal layer previously applied to a substrate such that the metal layer is broken up into individual islands. The laser beam is expanded into a beam having a linear cross-section, and a linear exposure zone of the metal layer is simultaneously exposed to the expanded beam. The exposure zone is moved across the metal layer in a direction transverse to the length of the exposure zone. An apparatus for carrying out the method comprises a device for transporting a substrate with a metal layer applied thereto, a laser to produce a laser beam, and a device for expanding the laser beam to produce a linear exposure zone that extends perpendicularly to the direction in which the substrate is transported.

A wavelength conversion optical device includes: a substrate having a virtual plane and first and second regions and including multiple first crystal regions and multiple second crystal regions. Each of the multiple first crystal regions includes a pair of portions arranged in a direction intersecting a first plane with the first plane interposed therebetween, the first plane being located in the first region, and directions of spontaneous polarizations of each of the pair of portions being directions away from the first plane. Each of the multiple second crystal regions includes a pair of portions arranged in a direction intersecting a second plane with the second plane interposed therebetween, the second plane being located in the second region. Directions of spontaneous polarizations of each of the pair of portions being directions away from the second plane.

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.