A laser processing method includes irradiating a laser light into a substrate along a cutting line to form a laser-scribed layer within the substrate, irradiating an X-ray onto a first surface of the substrate along the cutting line, obtaining an image of a diffracted X-ray from the substrate, and determining whether or not the laser-scribed layer is formed along the cutting line, based on analysis of the obtained image of the diffracted X-ray.

A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).

A method for separating a temporarily bonded substrate stack by bombardment of a joining layer of the substrate stack by means of laser beams emitted by a laser, characterised in that laser beams of the laser reflected and/or transmitted at the temporarily bonded substrate stack are detected during the bombardment of the joining layer with the laser beams. The invention also relates to a corresponding device.

A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).

A method is provided for monitoring the laser annealing of a semiconductor wafer. After annealing, images of many regions of the wafer are captured. The surface brightness of these regions is measured by computer, and statistics of these surface brightness measurements are determined, such as their mean and their standard deviation. Using a correlation between the surface brightnesses and the electrical resistance of the annealed wafer, the surface brightness statistics can be used to determine whether the annealing process resulted in a wafer that meets end user specifications. The surface brightness statistics can also be used to monitor the annealing tool, both during manufacturing and periodically or following maintenance.

A system includes an orientation determination system comprising a camera where the camera is configured to capture an image of an orientation feature of a physical dental model of a dental arch of a customer with material thermoformed thereon. The orientation determination system is configured to identify an offset of the physical dental model with respect to a fixture plate during positioning or before or after the physical dental model is positioned on the fixture plate by determining an actual orientation of the physical dental model based on the orientation feature. The system also includes a laser trimming system configured to cut the material along a trim line based on the identified offset while the fixture plate is moved about at least two axes to produce a dental aligner specific to the customer and being configured to reposition one or more teeth of the customer.

Provided are a laser machining device and a laser machining method capable of stably operating an autofocus function without causing an unfavorable state such as an overshoot etc. A laser machining device and a laser machining method of the present invention performs a normal AF (autofocus) control when a scan position of the machining laser light and the detecting laser light is located in a work central portion, and performs a slow-tracking AF (autofocus) control with a trackability to a displacement of a main surface of a work reduced to be lower than a trackability of the normal AF control when the scan position of the machining laser light and the detecting laser light is located in a work end portion.

The application is related to a laser transfer apparatus and a method performed by the laser transfer apparatus. The laser transfer apparatus may include: a laser oscillator configured to perform irradiation with a laser beam; a first stage movably disposed below the laser oscillator; a second stage movably disposed below the first stage; a flatness measurement sensor; and a controller. The controller may be configured to control, once a transfer substrate on which a plurality of light emitting diodes (LEDs) are arranged is loaded on the first stage, and a target substrate is loaded on the second stage, the flatness measurement sensor to measure flatness of each of the transfer substrate and the target substrate, and adjust a height of at least one of the first stage or the second stage based on the flatness.

There is provided an optical axis adjustment jig including a flat parallel-surface plate having an upper surface and a lower surface with reflective films disposed respectively thereon, and an image capturing unit disposed beneath the flat parallel-surface plate for capturing an image of a laser beam applied thereto. The flat parallel-surface plate is made of a material that is transmissive of a wavelength of the laser beam. The laser beam is applied through the flat parallel-surface plate to the image capturing unit. A tilt of the optical axis of the laser beam is detected on the basis of the shape of the beam spot of the laser beam whose image has been captured by the image capturing unit.

The present disclosure provides a stealth dicing method and apparatus. With the method, the focusing element focuses the laser beam on the surface of material to be diced, and the dynamic-equilibrium plasma channel is formed in the material to be diced by means of self-focusing and defocusing effect of plasma generated by ionizing the material to be diced. The modified layer may be formed in the material to be diced throughout the plasma channel, so as to realize stealth dicing.