Patent classifications
B23K26/384
CMC Laminate Components Having Laser Cut Features
Laminate components and methods for forming the same are provided. In one exemplary aspect, one or more features are laser cut into or along a laminate component or laminate sections thereof. The features are laser cut into or along the laminate component in an atmosphere. In this manner, and oxide layer is formed on the laser cut surfaces of the future. The features are laser cut into or along the laminate component or laminate sections thereof prior to an infiltration process, such as melt infiltration or chemical vapor infiltration. Accordingly, when the laminate component is infiltrated with an infiltration material, the infiltration material is prevented from infiltrating therethrough.
GLASS SUBSTRATE HAVING THROUGH HOLE AND HOLLOWED-OUT PORTION AND METHOD FOR PRODUCING THE SAME
A glass substrate for a semiconductor package includes a first principal surface, a second principal surface, at least one hollowed-out portion, and at least one through hole formed in a surrounding of the at least one hollowed-out portion, wherein in a section of the at least one hollowed-out portion taken in a direction perpendicular to the first principal surface, a minimum diameter of the at least one hollowed-out portion is smaller than an opening diameter of the at least one hollowed-out portion at each of the first principal surface and the second principal surface.
GLASS SUBSTRATE HAVING THROUGH HOLE AND HOLLOWED-OUT PORTION AND METHOD FOR PRODUCING THE SAME
A glass substrate for a semiconductor package includes a first principal surface, a second principal surface, at least one hollowed-out portion, and at least one through hole formed in a surrounding of the at least one hollowed-out portion, wherein in a section of the at least one hollowed-out portion taken in a direction perpendicular to the first principal surface, a minimum diameter of the at least one hollowed-out portion is smaller than an opening diameter of the at least one hollowed-out portion at each of the first principal surface and the second principal surface.
Systems and methods for optimizing complex systems
A computer-implemented method for optimizing control of a process includes a computer receiving a process definition and a collection of elements to be arranged in a way that optimizes the utility of the process; initializing the process using a collection of discrete elements (stops, events, work orders, tasks, locations, etc.), and producing a solution for said collection by inserting the elements into the solution using the Minimum Insertion Heuristic; modifying the order of the elements to be inserted and continuing the process to produce solutions with better scores; and continuing to produce solutions based on improving the order of insertion until the process is determined to be sufficiently optimized.
Systems and methods for optimizing complex systems
A computer-implemented method for optimizing control of a process includes a computer receiving a process definition and a collection of elements to be arranged in a way that optimizes the utility of the process; initializing the process using a collection of discrete elements (stops, events, work orders, tasks, locations, etc.), and producing a solution for said collection by inserting the elements into the solution using the Minimum Insertion Heuristic; modifying the order of the elements to be inserted and continuing the process to produce solutions with better scores; and continuing to produce solutions based on improving the order of insertion until the process is determined to be sufficiently optimized.
COMPOSITE PANEL COMPRISING A PERFORATED METALLIC FOIL FOR LIGHTNING STRIKE PROTECTION AND A PERFORATED METALLIC FOIL
A composite panel having a plurality of carbon plies, a perforated metallic foil comprising several apertures and being secured to the plurality of carbon plies, and a protective layer made from resin secured to the metallic foil. The perforated metallic foil is embedded in the protective layer through its apertures. A free surface of the protective layer forms a top side of the composite panel. The thickness of the protective layer between the top side of the composite panel and the perforated metallic foil is at least 15 micrometers and the perforated metallic foil has a thickness of not more than 30 micrometers. The plurality of apertures in the aggregate defines an open area of not more than 40% of the surface area and a maximum distance between two opposed points in a perimeter of an aperture is equal to or less than 3 mm
COMPOSITE PANEL COMPRISING A PERFORATED METALLIC FOIL FOR LIGHTNING STRIKE PROTECTION AND A PERFORATED METALLIC FOIL
A composite panel having a plurality of carbon plies, a perforated metallic foil comprising several apertures and being secured to the plurality of carbon plies, and a protective layer made from resin secured to the metallic foil. The perforated metallic foil is embedded in the protective layer through its apertures. A free surface of the protective layer forms a top side of the composite panel. The thickness of the protective layer between the top side of the composite panel and the perforated metallic foil is at least 15 micrometers and the perforated metallic foil has a thickness of not more than 30 micrometers. The plurality of apertures in the aggregate defines an open area of not more than 40% of the surface area and a maximum distance between two opposed points in a perimeter of an aperture is equal to or less than 3 mm
SYSTEMS AND METHODS FOR PRECISION FABRICATION OF AN ORIFICE WITHIN AN INTEGRATED CIRCUIT
A system and method for fabricating an orifice in a multi-layered semiconductor substrate and singulation of the semiconductor substrate includes adding a sacrificial layer of material to a first surface of a semiconductor substrate; subsequently, removing a first radius of a first depth of material from the semiconductor substrate along a direction normal to the first surface, the removal of the first depth of material uses a first removal technique that removes the first depth of material; and removing a second radius of a second depth of material from the semiconductor substrate along the direction normal to the first surface based on the removal of the first depth of material, the removal of the second depth of material uses a second removal technique.
THROUGH-GLASS VIA HOLE FORMATION METHOD
A through-glass via hole formation method, includes: an internal deformation region formation step in which an internal deformation region is formed inside a glass substrate at a predetermined distance from a surface of the glass substrate; a surface etching step in which the glass substrate is thinned by immersing the glass substrate in an etching solution such that a portion of the surface of the glass substrate, at which the internal deformation region is not formed, is etched and removed at a first etching rate; and a through-glass via hole formation step in which, with the glass substrate immersed in the etching solution, the internal deformation region is etched and removed at a second etching rate higher than the first etching rate such that a through-glass via hole is formed in the glass substrate along the internal deformation region.
THROUGH-GLASS VIA HOLE FORMATION METHOD
A through-glass via hole formation method, includes: an internal deformation region formation step in which an internal deformation region is formed inside a glass substrate at a predetermined distance from a surface of the glass substrate; a surface etching step in which the glass substrate is thinned by immersing the glass substrate in an etching solution such that a portion of the surface of the glass substrate, at which the internal deformation region is not formed, is etched and removed at a first etching rate; and a through-glass via hole formation step in which, with the glass substrate immersed in the etching solution, the internal deformation region is etched and removed at a second etching rate higher than the first etching rate such that a through-glass via hole is formed in the glass substrate along the internal deformation region.