A glass sensor substrate including metallizable through vias and related process is provided. The glass substrate has a first major surface, a second major surface and an average thickness of greater than 0.3 mm. A plurality of etch paths are created through the glass substrate by directing a laser at the substrate in a predetermined pattern. A plurality of through vias through the glass substrate are etched along the etch paths using a hydroxide based etching material. The hydroxide based etching material highly preferentially etches the substrate along the etch path. Each of the plurality of through vias is long compared to their diameter for example such that a ratio of the thickness of the glass substrate to a maximum diameter of each of the through vias is greater than 8 to 1.

A glass sensor substrate including metallizable through vias and related process is provided. The glass substrate has a first major surface, a second major surface and an average thickness of greater than 0.3 mm. A plurality of etch paths are created through the glass substrate by directing a laser at the substrate in a predetermined pattern. A plurality of through vias through the glass substrate are etched along the etch paths using a hydroxide based etching material. The hydroxide based etching material highly preferentially etches the substrate along the etch path. Each of the plurality of through vias is long compared to their diameter for example such that a ratio of the thickness of the glass substrate to a maximum diameter of each of the through vias is greater than 8 to 1.

A forming system includes a femtosecond laser and a control unit that includes one or more processors operatively connected to the femtosecond laser. The femtosecond laser is configured to emit laser pulses onto an inner surface of a face sheet of an acoustic inner barrel. The acoustic inner barrel includes an acoustic core comprising an array of hexagonal cells attached to an outer surface of the face sheet that is opposite the inner surface. The control unit is configured to control the femtosecond laser to laser drill a plurality of perforations in the face sheet via emitting laser pulses at pulse durations between about 100 femtoseconds and about 10,000 femtoseconds and at frequencies over 100,000 Hz.

A chip card body including a metal plate, a reception region in the metal plate for receiving a chip and configured for inductive coupling of the metal plate to a chip received in the reception region; and at least one through-opening in the metal plate and configured such that at least a part of the metal plate acts as an antenna for delivering an electromagnetic signal to the reception region.

Systems, apparatus and methods for performing laser operations in boreholes and other remote locations, such operations including laser drilling of a borehole in the earth, and laser workover and completion operations. Systems, apparatus and methods for generating and delivering high power laser energy below the surface of the earth and within a borehole. Laser operations using such down hole generated laser beams.

A laser processing method for a wafer includes: linearly forming a plurality of shield tunnels each having a fine hole and an amorphous region surrounding the fine hole at predetermined intervals in an inner part of a test substrate, the test substrate having a material and a thickness identical to those of a substrate of the wafer to be processed, while changing time intervals of a plurality of pulses constituting a burst pulse laser beam; and measuring a rupture strength when the test substrate is ruptured along the plurality of shield tunnels. Next, the time intervals of the pulses when the rupture strength is at a minimum are calculated, and a laser processing step is performed which linearly forms a plurality of shield tunnels at predetermined intervals in an inner part of the wafer, by irradiating the wafer with the laser beam having the time intervals of the pulses.

A laser processing method for a wafer includes: linearly forming a plurality of shield tunnels each having a fine hole and an amorphous region surrounding the fine hole at predetermined intervals in an inner part of a test substrate, the test substrate having a material and a thickness identical to those of a substrate of the wafer to be processed, while changing time intervals of a plurality of pulses constituting a burst pulse laser beam; and measuring a rupture strength when the test substrate is ruptured along the plurality of shield tunnels. Next, the time intervals of the pulses when the rupture strength is at a minimum are calculated, and a laser processing step is performed which linearly forms a plurality of shield tunnels at predetermined intervals in an inner part of the wafer, by irradiating the wafer with the laser beam having the time intervals of the pulses.

A method of manufacturing a mask includes forming a first protection layer on a first surface of a mask member, the first protection layer comprising first through-holes exposing portions of the first surface; radiating, through the first through-holes, a laser beam onto the exposed portions of the first surface to form blind holes in the mask member; and providing an etchant to form second through-holes in the mask member, the second through-holes comprising the blind bores and extending from the first surface to a second surface of the mask member opposing the first surface.

A method of manufacturing a mask includes forming a first protection layer on a first surface of a mask member, the first protection layer comprising first through-holes exposing portions of the first surface; radiating, through the first through-holes, a laser beam onto the exposed portions of the first surface to form blind holes in the mask member; and providing an etchant to form second through-holes in the mask member, the second through-holes comprising the blind bores and extending from the first surface to a second surface of the mask member opposing the first surface.

A glass sensor substrate including metallizable through vias and related process is provided. The glass substrate has a first major surface, a second major surface and an average thickness of greater than 0.3 mm. A plurality of etch paths are created through the glass substrate by directing a laser at the substrate in a predetermined pattern. A plurality of through vias through the glass substrate are etched along the etch paths using a hydroxide based etching material. The hydroxide based etching material highly preferentially etches the substrate along the etch path. Each of the plurality of through vias is long compared to their diameter for example such that a ratio of the thickness of the glass substrate to a maximum diameter of each of the through vias is greater than 8 to 1.