A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 μm.

A bonding structure bonds a Cu wiring line and a device electrode with each other. The bonding structure is arranged between the Cu wiring line and the device electrode, and comprises a first intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the Cu wiring line, a second intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the device electrode, and an intermediate layer that is present between the intermetallic compound layers. In the intermediate layer, a network-like IMC (a network-like intermetallic compound of Cu and Sn) is present in Sn.

A solder alloy is providing, the solder alloy including zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc.

A solder alloy has an alloy composition consisting of, in mass %, Ag: 0 to 4%, Cu: 0.1 to 1.0%, Ni: 0.01 to 0.3%, Sb: 5.1 to 7.5%, Bi: 0.1 to 4.5%, Co: 0.001 to 0.3%, P: 0.001 to 0.2%, and the balance being Sn.

A laser assembly is disclosed. The laser assembly includes a carrier for mounting a semiconductor laser diode (LD) and a capacitor thereon. The carrier provides, in a top surface thereof, a metal pattern having a die area for mounting the LD through a brazing material, a mounting area, and an auxiliary area for absorbing a surplus brazing material. The capacitor is mounted on the mounting area closer to the LD through another brazing material.

This invention relates to a lead-free solder alloy composition and a method of preparing a lead-free solder alloy, wherein the lead-free solder alloy composition includes a ceramic powder added to a lead-free solder of Sn-(0.1 to 2) wt % Cu, Sn-(0.5 to 5) wt % Ag, or Sn-(0.1 to 2) wt % Cu-(0.5 to 5) wt % Ag. According to this invention, a novel lead-free solder alloy, which functions as a replacement for a conventional lead-free solder, is provided, thus exhibiting superior spreadability, wettability, and mechanical properties than a conventional lead-free solder.

A solder-reinforced bonding system comprises a first substrate (110), a second substrate (120) at least partially in contact with a heating element (400), an adhesive (200) in contact with a first contact surface (115) of the first substrate (110) and a second contact surface (125) of the second substrate (120), and a plurality of solder balls (300) positioned in the adhesive (200) in contact with the first contact surface (115) in a location to receive thermal energy from the heating element (400). A method of producing a solder-reinforced adhesive bond between a first substrate (110) and second substrate (120), comprises (i) applying an adhesive composite (250) including an adhesive (200) and a plurality of solder balls (300) on a first contact surface (115) of the first substrate (110), (ii) connecting a second contact surface (125) of the second substrate (120) to a portion of the adhesive composite (250) opposite the first contact surface (115), and (iii) applying thermal energy from a heating element (400).

A solder alloy that contains 0.005 mass % or more and 0.1 mass % or less of Mn, 0.001 mass % or more and 0.1 mass % or less of Ge, and a balance of Sn. A plurality of Ge oxides is distributed on an outermost surface side of an oxide film including Sn oxide, Mn oxide and Ge oxide by adding 0.005 mass % or more and 0.1 mass % or less of Mn, 0.001 mass % or more and 0.1 mass % or less of Ge to the solder alloy having a principal ingredient of Sn, so that it is possible to obtain the discolor-inhibiting effect even under the high-temperature and high-humidity environment.

A flux according to the present invention is a halogen-free flux used for soldering that includes: a thixotropic agent a polyamide compound in which one endothermic peak or all of endothermic peaks obtained by differential thermal analysis are observed within a range of 130 to 200° C.; and an activator comprising an isocyanuric acid derivative, in which a content of the isocyanuric acid derivative is 5.0 mass % or less based on the entire flux.

Disclosed is a bonding structure that includes an intermetallic compound crystal composed of Sn and Cu, and, an Sn alloy matrix composed of Sn and Cu, being intended for bonding a metal body or an alloy body, the intermetallic compound crystal forming an endotaxial junction with the Sn alloy matrix, and the Sn alloy matrix and/or the intermetallic compound crystal forming an epitaxial junction with the metal body or the alloy body.