A lead-free, antimony-free tin solder which is reliable at high temperatures and comprises from 3.5 to 4.5 wt.% of silver, 2.5 to 4 wt.% of bismuth, 0.3 to 0.8 wt.% of copper, 0.03 to 1 wt.% nickel, 0.005 to 1 wt.% germanium, and a balance of tin, together with any unavoidable impurities.

Disclosed is a method for producing a high-temperature-resistant, lead-free solder joint between a circuit board and a part, wherein a lead-free solder preform is used that has a composite material having a first composite component arranged substantially in layers and wherein the part is soldered with the solder preform in a hot-bar selective soldering process. Also disclosed is a high-temperature-resistant, lead-free solder joint and a field device of automation technology for determining and/or monitoring the process variable of a medium with a high-temperature-resistant, lead-free solder joint.

Provided are a resin composition and a soldering flux. The resin composition includes at least one acid and rosin. The acid is selected from a dimer acid which is a reaction product of oleic acid and linoleic acid, a trimer acid which is a reaction product of oleic acid and linoleic acid, a hydrogenated dimer acid obtained by hydrogenating a dimer acid which is a reaction product of oleic acid and linoleic acid, and a hydrogenated trimer acid obtained by hydrogenating a trimer acid which is a reaction product of oleic acid and linoleic acid. A weight ratio of the at least one acid to the rosin is 0.15 or more and 1.00 or less based on the weight of the rosin. The soldering flux is obtained by diluting the resin composition with a solvent.

A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Provided is a preform solder including a first metal containing Sn and a second metal formed of an alloy containing Ni and Fe. Alternatively, provided is a preform solder (1) having a metal structure including a first phase (10) that is a continuous phase and a second phase (20) dispersed in the first phase (10), the first phase (10) contains Sn, the second phase (20) is formed of an alloy containing Ni and Fe, and a grain boundary (15) of a metal is present in the first phase (10).

A metal composition that includes a first metal; and a second metal containing a first transition metal element added to a first alloy having a melting point higher than a melting point of the first metal, and the second metal is an alloy capable of producing an intermetallic compound with the first metal.

A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

High reliability leadfree solder alloys for harsh service conditions are disclosed. In some embodiments, a solder alloy comprises 2.5-4.0 wt % Ag; 0.4-0.8 wt % Cu; 5.0-9.0 wt % Sb; 1.5-3.5 wt % Bi; 0.05-0.35 wt % Ni; and a remainder of Sn. In some embodiments, an apparatus comprises: a component comprising: a main ceramic body, and a side surface having disposed thereon an electrode and a thermal pad; a copper substrate; and a solder alloy electrically coupling the component and the copper substrate, wherein the solder alloy comprises: 2.5-4.0 wt % Ag; 0.4-0.8 wt % Cu; 5.0-9.0 wt % Sb; 1.5-3.5 wt % Bi; 0.05-0.35 wt % Ni; and a remainder of Sn. In some embodiments, an apparatus comprises: a light-emitting diode (LED) component; a Metal Core Printed Circuit Board (MCPCB); and a solder alloy electrically coupling the LED component and the MCPCB, wherein the solder alloy comprises: 2.5-4.0 wt % Ag; 0.4-0.8 wt % Cu; 5.0-9.0 wt % Sb; 1.5-3.5 wt % Bi; 0.05-0.35 wt % Ni; and a remainder of Sn.

An electrical assembly includes an electrical connector soldered to a conductive pad disposed on a glass surface by a solder alloy consisting essentially of 17% to 28% indium by weight, 12% to 20% zinc by weight, 1% to 6% silver by weight, 1% to 3% copper by weight, and a remaining weight of the solder alloy being tin.

A protective element includes an insulating substrate, a plurality of electrodes provided on the insulating substrate, a fuse element electrically connected to any electrode of the plurality of electrodes, and a heat generation element provided on the insulating substrate for heating and fusing the fuse element. The fuse element contains a composite metal material in which a first fusible metal and a second fusible metal are stacked, some of a component of the first fusible metal being dissolved at a joint working temperature, the second fusible metal being lower in melt temperature than the first fusible metal, at least some of a component of the second fusible metal being molten at the joint working temperature.