The present invention relates to a metal paste including: a first metal powder including nickel (Ni); a second metal powder including at least one selected from the group consisting of tin (Sn), zinc (Zn), bismuth (Bi), and indium (In); and a dispersing agent, and to a thermoelectric module which adopts a bonding technique using the metal paste.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

The present disclosure relates to a zinc-based alloy coating for steel strip through a continuous galvanizing process. This zinc-based alloy coating provides the steel with cathodic protection before and after the steel is press hardened processing at a high austenitization temperature up to 950° C. The zinc-based alloy coating also reduces or eliminates the susceptibility to liquid metal embrittlement during or after welding for various types of non-press hardenable advanced ultra high-strength steels. The zinc-based alloy comprises at least one element selected from manganese (Mn) and/or antimony (Sb).

Provided is a solder paste which uses a conventional flux, and for which long-term preservation is made possible and an easy preservation method can be realized by suppressing changes in the viscosity of the paste over time. This solder paste is provided with a solder powder, a zirconium oxide powder, and a flux, and changes in the viscosity of the paste over time are suppressed.

A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.

A bonded structure, including a Zn-based brazing filler metal and a Cu-based bonding object bonded to each other, wherein the bonded structure includes a joint including a first alloy phase, a second alloy phase and a third alloy phase between the Zn-based brazing filler metal and the Cu-based bonding object, wherein the second alloy phase is formed at an interface between the first alloy phase and the third alloy phase, and wherein, in a cross section parallel to a bonding direction, a ratio of the second alloy phase at the interface between the first alloy phase and the third alloy phase is less than 80%.

Embodiments of the present disclosure relate to an alloy as a brazing alloy for an electric switch braze joint, an electric switch braze joint, an electric switch and a method of producing an electric switch braze joint. The alloy composition of said the alloy consists of at least one element selected from each of group I and group II listed below, and a balance of impurities, Ag, and at least one of Cu, and Zn. Group I encompasses Cd, Mn, Ni, P, Sb, Si, Sn, Ti, and oxides thereof in a total amount of 0.5 to 45.0 wt. %. Group II encompasses Bi, Mo, Te, W, and oxides thereof, oxides of Cu and Zn in a total amount of 0.1 to 15.0 wt. %.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

An airfoil includes a first airfoil piece and a second airfoil piece that is bonded to the first airfoil piece at a joint. The first airfoil piece and the second airfoil piece are formed of aluminum alloys. At least one of the aluminum alloys is an aluminum alloy composition that has greater than 0.8% by weight of zinc. The joint includes a braze element of magnesium, zinc, or combinations thereof in a higher concentration than in other portions of the first airfoil piece and the second airfoil piece.