The present invention relates to a silica glass member including: a main body including a silica glass and having a bonding part for bonding to another member; and a bonding film which is provided on the bonding part, has a thickness of 0.2 m to 10 m, and includes Au and a glass formed through melting of glass frit, in which the bonding film is produced from Au powder having an average particle diameter of 3 m or less and glass frit having a softening point of 850 C. or lower, a process for producing a silica glass member, and a process for bonding a ceramic and a silica glass.

A non-magnetic lid for sealing a hermetic package. The lid includes a molybdenum substrate having a sputtered adhesion layer and a copper seed layer. The lid also includes a plated palladium solder base layer, and has a gold/tin solder preform attached to a sealing surface of the lid.

A non-magnetic lid for sealing a hermetic package. The lid includes a molybdenum substrate having a sputtered adhesion layer and a copper seed layer. The lid also includes a plated palladium solder base layer, and has a gold/tin solder preform attached to a sealing surface of the lid.

A method of manufacturing a feedthrough dielectric body for an active implantable medical device includes the steps of forming a ceramic body in a green state, or, stacking discrete layers of ceramic in a green state upon one another and laminating together. The ceramic body has a first side opposite a second side. At least one via hole is formed straight through the ceramic body extending between the first and second sides. At least one via hole is filled with a conductive paste. The ceramic body and the conductive paste are then dried. The ceramic body and the conductive paste are isostatically pressed at above 1000 psi to remove voids and to form a closer interface for sintering. The ceramic body and the conductive paste are sintered together to form the feedthrough dielectric body. The feedthrough dielectric body is hermetically sealed to a ferrule.

A pre-soldered circuit carrier includes a carrier having a metal die attach surface, a plated solder region on the metal die attach surface, wherein a maximum thickness of the plated solder region is at most 50 ?m, the plated solder region has a lower melting point than the first bond pad, and the plated solder region forms one or more intermetallic phases with the die attach surface at a soldering temperature that is above the melting point of the plated solder region.

Disclosed herein is a method of assembling a substrate supporting apparatus, including coupling a conductive rod to an electrode installed in a substrate support provided to support a substrate, forming a sacrificial layer on the rod, bonding the rod and the electrode by melting and infiltrating a filler into a coupling area between the rod and the electrode, while forming a protective layer between the rod and the sacrificial layer by infiltrating the filler into a gap between the rod and the sacrificial layer, and coupling a shaft to the substrate support, the rod extending through the shaft.

A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.

A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

An AuSnAg-based solder alloy for high temperature use containing Sn, Ag, Au and elements that are inevitably contained owing to manufacture procedure, wherein the AuSnAg-based solder alloy has a composition adjusted so that a solidus temperature is within a range of 280 to 400 C. with a gap between the solidus temperature and the liquidus temperature being within 40 C. The AuAgSn-based solder alloy has low cost, and is excellent in solderability, reflow wettability and reliability. The excellent reflow wettability of the AuAgSn-based solder alloy allows it to be useful in reflow bonding of crystal quartz devices, SAW filters and MEMS.

A mount structure having a joining capable of withstanding development of cracks generated by thermal stress due to repeated temperature changes in a mount structure having the joining of a large area is formed by joining a ceramic substrate electrode of a ceramic substrate and a metal substrate electrode of a metal substrate by a laminate, in which the laminate is formed by stacking a first interface layer, a first solder joining portion, a second interface layer, a first buffer material electrode, a buffer material, a second buffer material electrode, a third interface layer, a second solder joining portion and a fourth interface layer in this order from the ceramic substrate electrode toward the metal substrate electrode, a thickness of the laminate is 30 m or more and 100 m or less, a difference between a thickness of the first solder joining portion and a thickness of the second solder joining portion is within 25%, and differences in elastic moduli and in linear expansion coefficients between the first solder joining portion and the buffer material are respectively within 62%.