A pre-soldered circuit carrier includes a carrier having a metal die attach surface, a plated solder region on the metal die attach surface, wherein a maximum thickness of the plated solder region is at most 50 μm, the plated solder region has a lower melting point than the first bond pad, and the plated solder region forms one or more intermetallic phases with the die attach surface at a soldering temperature that is above the melting point of the plated solder region.

This lid material for packages is a lid material for packages which is bonded to a package substrate, and the lid material for packages includes: a glass member including a bonding portion provided in a planar frame shape and a light transmitting portion provided inside the bonding portion; one or more metallized layers formed in a frame shape at the bonding portion of the glass member; and one or more Au—Sn layers provided on the metallized layers and having a frame shape having a width of 250 μm or less.

The present invention relates to a method of forming a joint bonding together two solid objects and joints made by the method, where the joint is formed by a layer of a binary system which upon heat treatment forms a porous, coherent and continuous single solid-solution phase extending across a bonding layer of the joint.

This lid material for packages is a lid material for packages which is bonded to a package substrate, and the lid material for packages includes: a glass member including a bonding portion provided in a planar frame shape and a light transmitting portion provided inside the bonding portion; one or more metallized layers formed in a frame shape at the bonding portion of the glass member; and one or more Au—Sn layers provided on the metallized layers and having a frame shape having a width of 250 μm or less.

A conductive path can be formed using metal material coated with a layer that is controllably activated to release the metal material downhole in the wellbore. The conductive path can be used to communicate signals or power downhole in the wellbore.

A brazed article comprising a ceramic component, a metallizing layer comprising tungsten and yttrium oxide disposed against a surface of the ceramic component, and a bonding layer disposed between the metallizing layer and a metal component wherein said bonding layer comprises a nickel-rich portion proximal to the ceramic component and a gold-rich portion interfacing against the metal component.

A brazed article comprising a ceramic component, a metallizing layer comprising tungsten and yttrium oxide disposed against a surface of the ceramic component, and a bonding layer disposed between the metallizing layer and a metal component wherein said bonding layer comprises a nickel-rich portion proximal to the ceramic component and a gold-rich portion interfacing against the metal component.

A chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.

Particles that can suppress the occurrence of cracking or peeling during a thermal cycle in a connection part that connects two members to be connected are provided. The particles according to the present invention are particles used to obtain a connecting material for forming a connection part that connects two members to be connected, and the particles are used for forming the connection part such that thickness of the connection part after connection exceeds twice the average particle diameter of the particles before connection, or the particles have an average particle diameter of 0.1 μm or more and 15 μm or less, the particles have a 10% K value of 30 N/mm.sup.2 or more and 3000 N/mm.sup.2 or less, and the particles have a particle diameter CV value of 50% or less.

A first conductive pad is connected to a second conductive pad by using a post-transition metal and a nanoporous metal. An example of the post-transition metal is indium. An example of the nanoporous metal is nanoporous gold. A block of the post-transition metal is formed on the first conductive pad. The block of the post-transition metal is coated with a layer of anti-corrosion material. A block of the nanoporous metal is formed on the second conductive pad. The block of the post-transition metal and the block of the nanoporous metal are thermal compressed to form an alloy between the first conductive pad and the second conductive pad.