A self-cleaning wire bonding machine includes a spool, a cleaning tank, a drying element, a tensioner, and a nozzle. The spool includes a rotating body and a metal wire wound around the rotating body. The cleaning tank is configured to clean the metal wire after the rotating body passes the metal wire through the cleaning tank. The drying element is configured to dry the metal wire after passing through the cleaning tank. The tensioner is configured to adjust a tension of the metal wire. The nozzle is configured to heat the metal wire, and the metal wire exits out of the nozzle after being heated.

A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.

Implementations of the disclosure are directed to improving the ductility of a tin-enriched AuSn solder alloy by doping the solder alloy with Germanium (Ge). The final AuSnGe alloy may consist of 75 to 80 wt % Au, 20 to 25 wt % Sn, and 0.05 to 1.5 wt % Ge.

The present invention relates to an article comprising a ceramic substrate (310) comprising a source of zirconium oxide; a metallic substrate (320); and a braze joint disposed between the ceramic substrate and the metallic substrate. The braze joint comprises (i) a gold rich phase (330) interfacing against a surface of the ceramic substrate. The gold rich phase comprises a refractory metal selected from the group consisting of molybdenum, tungsten, niobium, tantalum and combinations thereof; and (ii) a second metallic phase (340) comprising a metal selected form the group consisting of nickel, iron, vanadium, cobalt, chromium, osmium, tantalum or combinations thereof.

A method and apparatus for multiple flexible circuit cable attachment is described herein. Gold bumps are bonded on interconnection pads of a substrate to create a columnar structure and solder or conductive epoxy is dispensed on the flexible cable circuit. The substrate and flexible cable circuit are aligned and pressed together using force or placement of a weight on either the substrate or flexible cable circuit. Appropriate heat is applied to reflow the solder or cure the epoxy. The solder wets to the substrate pads, assisted by the gold bumps, and have reduced bridging risk due to the columnar structure. A nonconductive underfill epoxy is applied to increase mechanical strength.

A method and apparatus for multiple flexible circuit cable attachment is described herein. Gold bumps are bonded on interconnection pads of a substrate to create a columnar structure and solder or conductive epoxy is dispensed on the flexible cable circuit. The substrate and flexible cable circuit are aligned and pressed together using force or placement of a weight on either the substrate or flexible cable circuit. Appropriate heat is applied to reflow the solder or cure the epoxy. The solder wets to the substrate pads, assisted by the gold bumps, and have reduced bridging risk due to the columnar structure. A nonconductive underfill epoxy is applied to increase mechanical strength.

The present invention relates to a sealing lid for a package containing an optical element. For the sealing lid, a translucent material such as glass that can transmit light such as visible light is used. The present invention includes a lid main body made of the translucent material. The lid main body includes a joining region having a frame shape corresponding to an outer circumferential shape of the lid main body. A plurality of pieces of brazing material made of a eutectic alloy are fused on the joining region of the lid main body. An arrangement state of the brazing material includes aligning spherical pieces of brazing material continuously to form a frame shape along the joining region.

A method and apparatus for multiple flexible circuit cable attachment is described herein. Gold bumps are bonded on interconnection pads of a substrate to create a columnar structure and solder or conductive epoxy is dispensed on the flexible cable circuit. The substrate and flexible cable circuit are aligned and pressed together using force or placement of a weight on either the substrate or flexible cable circuit. Appropriate heat is applied to reflow the solder or cure the epoxy. The solder wets to the substrate pads, assisted by the gold bumps, and have reduced bridging risk due to the columnar structure. A nonconductive underfill epoxy is applied to increase mechanical strength.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.