Provided are a Cu column, a Cu core column, a solder joint, and a through-silicon via, which have the low Vickers hardness and the small arithmetic mean roughness. For the Cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 μm, and its Vickers hardness is equal to or higher than 20 HV and equal to or less than 60 HV. Since the Cu column 1 is not melted at a melting temperature in the soldering and a definite stand-off height (a space between the substrates) can be maintained, it is preferably applied to the three dimensional mounting or the pitch narrowing mounting.

A method of manufacturing includes depositing a braze filler adjacent to a void between a first component and a second component thus holding the components in position before brazing. The first and second components are heated to melt and flow the braze filler into the void. A braze joint is formed between the first and second components by cooling the braze filler. Depositing the braze filler can include laser cladding the braze filler to the first and/or second components adjacent the void. The method also optionally includes welding the first and second components in position with the braze filler adjacent to the void. The braze filler may be deposited as a powder, cold spray, melted brazed filament, spherical ball or any other suitable form.

Aiming at providing a metal particle, an electro-conductive paste, a formed article, and a laminated article that are able to form a highly reliable and high-quality electric interconnect, an electro-conductive bonding portion, or a three-dimensional structure that is less likely to produce the Kirkendall void, this invention discloses a metal particle which include an outer shell and a core part, the outer shell including an intermetallic compound and covering the core part.

A solder-coated ball (10A) includes a spherical core containing Ni and P; and a solder layer (12) formed to coat the core (11). A solder-coated ball (10B) further includes a Cu plating layer (13) formed between the core (11) and the solder layer (12). A solder-coated ball (10C) further includes an Ni plating layer (14) formed between the Cu plating layer (13) and the solder layer (12).

Provided are a Cu ball, a Cu core ball, a solder joint, solder paste and foamed solder, which are superior in the impact resistance to dropping and can inhibit any occurrence of poor joints a junction defect. An electronic component 60 is constructed by joining a solder bump 30 of a semiconductor chip 10 to an electrode 41 of a printed circuit board 40 with solder paste 12, 42. The solder bump 30 is formed by joining an electrode 11 of the semiconductor chip 10 to the Cu ball 20. The Cu ball 20 according to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.95, and Vickers hardness which is equal to or higher than 20 HV and equal to or less than 60 HV.

The invention relates to a process for manufacturing a vacuum insulated glazing wherein the glazing is assembled in a single stage by supplying glass panes, metallic spacers and corner and frame metallic seal elements which are brazed onto adhesion layers previously deposited onto the edge region areas of the glass panes.

A brazed heat exchanger includes plates that are stacked or nested to define flow channels for multiple media. Inserts are arranged within at least some of the flow channels. Two different braze alloys having compositions based on different metals are used to form braze joints between the plates and the inserts. In some cases, a copper-based braze alloy is used for joints corresponding to flow channels for one of the media in order to provide high pressure-resisting strength to those flow channels, while an iron-based braze alloy is used for joints corresponding to flow channels for another of the media where dissolved copper is undesirable.

A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 μm.

A bonding structure bonds a Cu wiring line and a device electrode with each other. The bonding structure is arranged between the Cu wiring line and the device electrode, and comprises a first intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the Cu wiring line, a second intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the device electrode, and an intermediate layer that is present between the intermetallic compound layers. In the intermediate layer, a network-like IMC (a network-like intermetallic compound of Cu and Sn) is present in Sn.

A solder and methods of forming an electrical interconnection are shown. Examples of solders include gallium based solders. A solder including gallium is shown that includes particles of other solders mixed with a gallium based matrix. Methods of applying a solder are shown that include swiping a solder material over a surface that includes a resist pattern. Methods of applying a solder are also shown that include applying a solder that is immersed in an acid solution that provides a fluxing function to aid in solder adhesion.