Patent classifications
B23K35/3026
USE OF AN ALLOY AS A BRAZING ALLOY FOR AN ELECTRIC SWITCH BRAZE JOINT, AN ELECTRIC SWITCH BRAZE JOINT, AN ELECTRIC SWITCH AND A METHOD OF PRODUCING AN ELECTRIC SWITCH BRAZE JOINT
Embodiments of the present disclosure relate to an alloy as a brazing alloy for an electric switch braze joint, an electric switch braze joint, an electric switch and a method of producing an electric switch braze joint. The alloy composition of said the alloy consists of at least one element selected from each of group I and group II listed below, and a balance of impurities, Ag, and at least one of Cu, and Zn. Group I encompasses Cd, Mn, Ni, P, Sb, Si, Sn, Ti, and oxides thereof in a total amount of 0.5 to 45.0 wt. %. Group II encompasses Bi, Mo, Te, W, and oxides thereof, oxides of Cu and Zn in a total amount of 0.1 to 15.0 wt. %.
Stick electrode
The exposed metal tip of the strike end of an SMAW welding electrode is covered with a protective coating formed from a binder and metal particles. Because metal particles rather than graphite particles are used to provide electrical conductivity to this protective coating, flare-up of the arc when initially struck is eliminated substantially completely. In addition, the potential for weld porosity problems is also eliminated, because the metal particles of the inventive electrode do not produce CO.sub.2 as a reaction by-product which can ultimately lead to improper welding technique.
TIG WELDED JOINT
A TIG welded joint in a high-Mn content steel material that can be formed with reduced occurrence of hot cracking during the welding process and has high strength and excellent cryogenic impact toughness. In the TIG welded joint, the high-Mn content steel material has a chemical composition including, by mass %, C: 0.10 to 0.80%, Si: 0.05 to 1.00%, Mn: 18.0 to 30.0%, P: 0.030% or less, S: 0.0070% or less, Al: 0.010 to 0.070%, Cr: 2.5 to 7.0%, N: 0.0050 to 0.0500%, and O: 0.0050% or less, the balance being Fe and incidental impurities, and a weld metal has a chemical composition including C: 0.10 to 0.80%, Si: 0.05 to 1.00%, Mn: 15.0 to 30.0%, P: 0.030% or less, S: 0.030% or less, Al: 0.100% or less, Cr: 6.0 to 14.0%, and N: 0.100% or less, the balance being Fe and incidental impurities.
ELECTRODES FOR FORMING AUSTENITIC AND DUPLEX STEEL WELD METAL
The disclosed technology generally relates to consumable electrode wires and more particularly to consumable electrode wires having a core-shell structure, where the core comprises chromium. In one aspect, a welding wire comprises a sheath having a steel composition and a core surrounded by the sheath. The core comprises chromium (Cr) at a concentration between about 12 weight % and about 18 weight % on the basis of the total weight of the welding wire, manganese (Mn) at a concentration between about 12 weight % and about 18 weight % on the basis of the total weight of the welding wire, nickel (Ni) at a concentration between zero and about 5 weight % on the basis of the total weight of the welding wire, and carbon (C) at a concentration greater than zero weight %, wherein concentrations of Ni, C and Mn are such that [Ni]+30[C]+0.5[Mn] is less than about 12 weight %, wherein [Ni], [C], and [Mn] represent weight percentages of respective elements on the basis of the total weight of the welding wire. The disclosed technology also relates to welding methods and systems adapted for using the chromium-comprising electrode wires.
Flux-cored wire for carbon dioxide gas shielded arc welding
A flux-cored wire for carbon dioxide gas shielded arc welding including, in terms of % by mass with respect to a total mass of the wire, 0.03 to 0.08% of C, 0.2 to 0.7% of Si, 1.4 to 3.0% of Mn, 0.01 to 0.5% of Cu, 0.8 to 3.0% of Ni, 0.05 to 0.5% of Ti, 0.002 to 0.015% of B, 0.05% or less of Al, 4 to 8% in terms of TiO.sub.2, 0.1 to 0.6% of in terms of SiO.sub.2, 0.02 to 0.3% in terms of Al.sub.2O.sub.3, 0.1 to 0.8% of Mg, 0.05 to 0.3% in terms of F, 0.05 to 0.3% in terms of Na and K in a fluorine compound, 0.05 to 0.2% of Na.sub.2O and K.sub.2O, and 0.2% or less in terms of ZrO.sub.2.
SINTERING PASTES WITH HIGH METAL LOADING FOR SEMICONDUCTOR DIE ATTACH APPLICATIONS
A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.
Solder for Limiting Substrate Damage Due to Discrete Failure
A solder composition comprising a material in a first phase (e.g., liquid and/or solid phase) with a transition temperature is provided. Exposure of the solder to a temperature that meets or exceeds the transition temperature causes the material to undergo a phase change from the first phase to a gaseous phase. The phase change physically transforms the solder material.
Solder for Limiting Substrate Damage Due to Discrete Failure
A solder composition comprising a material in a first phase (e.g., liquid and/or solid phase) with a transition temperature is provided. Exposure of the solder to a temperature that meets or exceeds the transition temperature causes the material to undergo a phase change from the first phase to a gaseous phase. The phase change physically transforms the solder material.
Bonded body and power module substrate
The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a CuPSn-based brazing filler material and a Ti material, wherein a CuSn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic member and the Cu member, and intermetallic compounds containing P and Ti are dispersed in the CuSn layer.
Welding method
A welding method wherein the root gap aperture displacement is measured before welding begins, and a welding material having a Mn/S ratio and a Mn/Si ratio compatible with the measured root gap aperture displacement is selected from gas-shielded arc welding materials. Gas-shielded arc welding is then performed using the selected welding material.