Provided herein are sinterable films and pastes as conductive die attach materials having advantageous properties for use in die semiconductor packages. Also provided are formulations useful for the preparation of such films and pastes, as well as methods for making such formulations. In additional aspects of the present invention, there are provided conductive networks prepared from compositions according to the present invention. In certain aspects, the invention relates to articles comprising such sintering films and pastes adhered to a suitable substrate therefor.

A joining method includes the steps of placing a brazing element between an interface area of a first ceramic piece and an interface area of a second ceramic piece to create a joining pre-assembly, placing the components of said joining pre-assembly into a process chamber, removing oxygen from said process chamber, and heating at least said brazing element of said joining pre-assembly, thereby hermetically joining said first ceramic piece to said second ceramic piece. The brazing element consists of Nickel and Carbon.

A metal-cored electrode for welding to form a weld bead on a ferrous material, which weld bead includes at least 35 wt. % nickel. The metal-cored electrode includes a metal sheath surrounding a core. The core includes greater than 35 wt. % nickel.

Provided is a brazing filler material for bonding iron-based sintered member that includes a sintered compact containing Cu, Mn, and a remainder of Ni and unavoidable impurities, and an oxide film formed on a surface of the sintered compact. An oxygen concentration may account for not less than 0.1% by mass of a total amount of the brazing filler material. The oxide film may contain Mn.

A method of furnace-less brazing of a substrate is provided. The method includes providing a substrate having a brazing region thereon; disposing braze precursor material containing a nickel powder, an aluminum powder, and a platinum group metal powder on the brazing region; and initiating an exothermic reaction of the braze precursor material such that the exothermic reaction produces a braze material that reaches a braze temperature above the liquidus temperature for the braze material. A braze precursor material is also provided.

A Ni-based alloy wire for submerged arc welding according to an aspect of the present invention includes, as a chemical composition, by mass %, C: 0.001% to 0.060%, Si: 0.01% to 3.00%, Mn: 0.01% to 6.00%, Mo: 15.0% to 25.0%, W: 2.5% to 10.0%, Ta: 0.002% to 0.100%, Ni: 65.0% to 82.4%, Al: 0% to 2.00%, Ti: 0% to 2.00%, Cu: 0% to 1.0%, P: 0% to 0.0200%, S: 0% to 0.0200%, N: 0% to 0.1000%, O: 0% to 0.0100%, Fe: 0% to 10.0000%, Co: 0% to 0.1000%, Cr: 0% to 1.0000%, V: 0% to 0.1000%, Nb: 0% to 0.1000%, B: 0% to 0.0100%, Bi: 0% to 0.0100%, Ca: 0% to 0.0200%, REM: 0% to 0.0300%, Zr: 0% to 0.1000%, and a remainder: impurities; in which a value X is 0.010% to 0.180%.

A superalloy powder mixture is provided for use with additive manufacturing or welding metal components or portions thereof that includes a high melt superalloy powder and a low melt superalloy powder. The superalloy powder mixture comprises by weight about 4% to about 23% chromium, about 4% to about 20% cobalt, 0% to about 8% titanium, about 1.5% to about 8% aluminum, 0% to about 11% tungsten, 0% to about 4% molybdenum, about 1% to about 13% tantalum, 0% to about 0.2% carbon, 0% to about 1% zirconium, 0% to about 4% hafnium, 0% to about 4% rhenium, 0% to about 0.1% yttrium and/or cerium, 0% to about 0.04% boron, 0% to about 2% niobium, greater than 40% nickel, greater than 4% in total of aluminum and optional titanium content. The high melt superalloy powder includes less than half the content by weight percent of tantalum compared to the content by weight percent of tantalum in the low melt superalloy powder.

Provided is a preform solder including a first metal containing Sn and a second metal formed of an alloy containing Ni and Fe. Alternatively, provided is a preform solder (1) having a metal structure including a first phase (10) that is a continuous phase and a second phase (20) dispersed in the first phase (10), the first phase (10) contains Sn, the second phase (20) is formed of an alloy containing Ni and Fe, and a grain boundary (15) of a metal is present in the first phase (10).

Provided herein are sinterable films and pastes as conductive die attach materials having advantageous properties for use in die semiconductor packages. Also provided are formulations useful for the preparation of such films and pastes, as well as methods for making such formulations. In additional aspects of the present invention, there are provided conductive networks prepared from compositions according to the present invention. In certain aspects, the invention relates to articles comprising such sintering films and pastes adhered to a suitable substrate therefor.

A metal composition that includes a first metal; and a second metal containing a first transition metal element added to a first alloy having a melting point higher than a melting point of the first metal, and the second metal is an alloy capable of producing an intermetallic compound with the first metal.