B23K35/322

Joining method and joining system

A joining method for joining a first member and a second member is provided. The joining method includes a step of providing a first brazing layer on the first member by plating, a step of providing a second brazing layer on the first brazing layer by plating, a step of arranging the first member and the second member to oppose each other across the first brazing layer and the second brazing layer, and a step of melting the first brazing layer and the second brazing layer to join the first member and the second member which are arranged to oppose each other.

Metallic particle paste, cured product using same, and semiconductor device

According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.

Device and Method for Producing a Device
20180261564 · 2018-09-13 ·

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component, a second component and a connecting element directly arranged between the first component and the second component, wherein the connecting element includes at least a first metal, which is formed as an adhesive layer, a diffusion barrier and a component of a first phase and a second phase of the connecting element, wherein the adhesive layer is arranged on the first component and/or the second component, wherein the first phase and/or the second phase includes, besides the first metal, further metals different from the first metal, wherein a concentration of the first metal in the first phase is greater than a concentration of the first metal in the second phase, and wherein the connecting element includes a layer of a silicide of the first metal.

Device comprising a connecting component and method for producing a connecting component

A device is specified, said device comprising a first component (1), a second component (2), and a connecting component (3) comprising at least a first region (31) and at least a second region (32). The composition of the first region (31) differs from the composition of the second region (32). The connecting component (3) is arranged between the first component (1) and the second component (2). The connecting component (3) comprises different kinds of metals, the first region (31) of the connecting component (3) comprises a first metal (41), and the concentration of the first metal (41) is greater in the first region (31) than the concentration of the first metal (41) in the second region (32).

STRUCTURE BRAZE OF HARD-TO-WELD SUPERALLOY COMPONENTS USING DIFFUSION ALLOY INSERT

A method for treating a component and a treated component are provided. The method includes the steps of machining a tapered slot in the component. The tapered slot is measured to determine dimensions. An insert is formed to have a corresponding geometry to the tapered slot with a braze gap between an outer surface of the insert and an inner surface of the tapered slot. A layer of a braze material is deposited on the outer surface of the insert, where a thickness of the layer corresponds to the braze gap. The layer of the braze material on the outer surface of the insert is sintered to fabricate a diffusion layer. The insert is positioned into the tapered slot. The diffusion layer is brazed to join the insert to the taper slot. The treated component includes a surface having a tapered slot, an insert, and a braze joint.

Solderable conductive polymer thick film composition

A conductive polymer thick film composition suitable for lead-free soldering comprising metallic particles and an organic vehicle comprising at least one phenolic resin and a solvent is provided. A method of soldering to the conductive polymer thick film composition of the invention is also provided. An article comprising a substrate and a cured polymer film on a surface of the substrate formed of the conductive polymer thick film composition of the invention is provided.

INTERCONNECTION OF CONDUCTOR TO FEEDTHROUGH
20170296832 · 2017-10-19 ·

A method of interconnecting a conductor and a hermetic feedthrough of an implantable medical device includes welding a lead to a pad on a feedthrough. The feedthrough includes a ceramic insulator and a via hermetically bonded to the insulator. The via includes platinum. The pad is bonded to the insulator and electrically connected to the via, includes platinum, and has a thickness of at least 50 m. The lead includes at least one of niobium, platinum, titanium, tantalum, palladium, gold, nickel, tungsten, and oxides and alloys thereof

BRAZE JOINTS WITH A DISPERSED PARTICULATE MICROSTRUCTURE

The microstructure of braze joints in polycrystalline diamond compact (PDC) cutters may be tailored to increase the shear strength of the braze joint, for example, by increasing the amount of a dispersed particulate microstructure therein. A method for forming a dispersed particulate microstructure may include brazing a polycrystalline diamond table to a hard composite substrate with a braze alloy at a braze temperature between 5 C. above a solidus temperature of the braze alloy and 200 C. above a liquidus temperature of the braze alloy; and forming a braze joint between the polycrystalline diamond table and the hard composite substrate that comprises at least 40% by volume of the dispersed particulate microstructure composed of a particulate inter-metallic phase having a diameter of 0.5 m to 2.0 m and an aspect ratio of 1 to 5 dispersed in a ductile matrix.

Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same

A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

SOLDER PARTICLES AND METHOD FOR PRODUCING SOLDER PARTICLES

A method for producing solder particles, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; and a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses. With respect to this method for producing solder particles, the average particle diameter of the solder particles is from 1 m to 30 m; and the C.V. value of the solder particles is 20% or less.