B24B37/105

Temperature-based in-situ edge assymetry correction during CMP

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

Polishing apparatus

A polishing apparatus which can efficiently polish an entirety of a back surface of a substrate, with the back surface facing downward, is disclosed. The polishing apparatus includes: a substrate holder configured to rotate the substrate; a polishing head configured to polish the back surface of the substrate; a tape advancing device; and a translational rotating mechanism configured to cause the polishing head to make a translational rotating motion. The substrate holder includes a plurality of rollers which are rotatable about their own axes. The plurality of rollers have substrate-holding surfaces capable of contacting a periphery of the substrate. The polishing head is disposed below the substrate-holding surfaces. The polishing head includes a polishing blade configured to press the polishing tape against the back surface of the substrate, and a pressing mechanism configured to push the polishing blade upward.

METHOD AND EQUIPMENT FOR PERFORMING CMP PROCESS

A chemical-mechanical planarization device and a method for using a chemical-mechanical planarization device in conjunction with a semiconductor substrate is provided. In accordance with some embodiments, the device includes: a pad disposed over a rotatable platen; a carrier head disposed over the pad and configured to retain a semiconductor substrate between the pad and the carrier head; a tank configured to retain a liquid containing composition; at least one tube fluidly coupled with the tank, the at least one tube comprising a photocatalyst therein; a nozzle fluidly coupled with the tank through the at least one tube and configured to supply the liquid containing composition onto the pad; and a light source configured to provide light to irradiate the photocatalyst, and the liquid containing composition passing through the at least one tube.

CHEMICAL MECHANICAL POLISHING TEMPERATURE SCANNING APPARATUS FOR TEMPERATURE CONTROL

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

TEMPERATURE-BASED IN-SITU EDGE ASSYMETRY CORRECTION DURING CMP

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

TEMPERATURE-BASED ASSYMETRY CORRECTION DURING CMP AND NOZZLE FOR MEDIA DISPENSING

A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

PLANAR GRINDER

A sample grinder includes a base having a bowl and a rotatable drive plate to operably support a grinding wheel. A head is configured to support a specimen holder and has a first drive for rotational drive of the specimen holder and a second drive for moving the head and specimen holder toward and away from the drive plate. The head has a sleeve that is larger than the specimen holder. A cover is disposed over the bowl and has an opening larger than the sleeve so that the sleeve fits through the opening when the specimen holder is moved toward the rotatable drive plate. The grinding wheel is mountable to the plate in a single radial orientation only. A dressing system is operably connected to a controller to monitor the current of the drive plate motor and/or the head first drive actuates the dressing system based upon the current drawn by the drive plate motor and/or the head first drive motor falling below a predetermined value.

POLISHING SYSTEM, LEARNING DEVICE, AND LEARNING METHOD OF LEARNING DEVICE
20200262023 · 2020-08-20 ·

A learning device includes a learning unit that executes learning of determining a corrected polishing condition by updating an action value function based on state information including at least one polishing condition and a calculation result calculated based on at least one measured value during polishing.

Method and equipment for performing CMP process

A chemical-mechanical planarization device and a method for using a chemical-mechanical planarization device in conjunction with a semiconductor substrate is provided. In accordance with some embodiments, the device includes: a pad disposed over a rotatable platen; a carrier head disposed over the pad and configured to retain a semiconductor substrate between the pad and the carrier head; a tank configured to retain a liquid containing composition; at least one tube fluidly coupled with the tank, the at least one tube comprising a photocatalyst therein; a nozzle fluidly coupled with the tank through the at least one tube and configured to supply the liquid containing composition onto the pad; and a light source configured to provide light to irradiate the photocatalyst, and the liquid containing composition passing through the at least one tube.

POLISHING PAD CONDITIONING APPARATUS

A polishing pad conditioning apparatus according to an example embodiment of the present inventive concept includes an apparatus body, a pivot arm provided on the apparatus body and including a housing having an internal space and provided at a distal end portion of the pivot arm and a head unit disposed at the distal end portion of the pivot arm. The head unit includes: a rotary motor provided in the internal space of the housing, the rotary motor including a rotary shaft; a foreign material blocking member connected to the rotary shaft; a disk holder connected to the rotary shaft; and a conditioning disk coupled to the disk holder. The foreign material blocking member includes a fluid flow groove configured to guide a movement of fluid for preventing foreign objects from entering the housing on an outer surface of the foreign material blocking member.