Chemically impregnated applicators used to provide hydrophobic surfaces on chemical mechanical polishing system components and related application methods. A method of forming a hydrophobic coating on a surface of a polishing system component includes cleaning the surface of the polishing system component to remove a polishing fluid residue therefrom and applying a hydrophobicity causing chemical solution to the surface of the polishing system component.

A polishing method for polishing a wafer by use of a polishing unit having a spindle with a polishing tool, the polishing tool having a disk-shaped base and an annular polishing layer that is fixed to one surface of the base and that includes an opening being located at a central portion in a diameter direction of the base and having a predetermined diameter, a maximum width of an effective polishing region of the polishing layer in a radial direction of the base being smaller than the radius of the wafer and the radius of the wafer being smaller than the diameter of the opening, the method includes polishing the wafer in such a manner that a part of a peripheral edge of the wafer protrudes from a periphery of the polishing layer and that the center of the wafer is located in the opening section of the polishing layer.

Chemically impregnated applicators used to provide hydrophobic surfaces on chemical mechanical polishing system components and related application methods are shown. A method of forming a hydrophobic coating on a surface of a polishing system component includes cleaning the surface of the polishing system component to remove a polishing fluid residue therefrom and applying a hydrophobicity causing chemical solution to the surface of the polishing system component.

A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

The present invention relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer. The present invention further relates to a computer-readable storage medium storing a program for causing the polishing apparatus to perform the polishing method. The polishing method includes: rotating a polishing table (3); and polishing a substrate (W) by pressing the substrate (W) against a polishing surface (2a). Polishing the substrate (W) includes a film-thickness profile adjustment process and a polishing-end-point detection process. The film-thickness profile adjustment process includes adjusting pressing forces on the substrate (W) against the polishing surface (2a) based on a plurality of film thicknesses, and determining a point in time at which a film-thickness index value has reached a film-thickness threshold value. The film-thickness index value is determined from at least one of the plurality of film thicknesses. The polishing-end-point detection process includes measuring a torque for rotating the polishing table (3) and determining a polishing end point based on the torque.

A coupling mechanism which enables a rotating body to follow an undulation of a polishing surface without generating flutter or vibration of the rotating body, and can finely control a load on the rotating body on a polishing surface in a load range which is smaller than the gravity of rotating body is disclosed. The coupling mechanism includes an upper spherical bearing and a lower spherical bearing disposed between a drive shaft and the rotating body. The upper spherical bearing has a first concave contact surface and a second convex contact surface which are in contact with each other, and the lower spherical bearing has a third concave contact surface and a fourth convex contact surface which are in contact with each other. The first concave contact surface and the second convex contact surface are located above the third concave contact surface and the fourth convex contact surface. The first concave contact surface, the second convex contact surface, the third concave contact surface, the fourth convex contact surface are arranged concentrically.

An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value m1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation σ1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

A method of raising a polishing head capable of preventing a workpiece from bending and preventing an excessive stress from generating in the workpiece by avoiding contact between the workpiece and a retainer ring when the polishing head is raised from a polishing pad after polishing of the workpiece is disclosed. The method includes: polishing the workpiece by pressing the workpiece against the polishing pad while rotating the polishing head and the polishing pad; stopping the rotations of the polishing pad and the polishing head; raising the retainer ring of the polishing head relative to the workpiece to separate the retainer ring from the polishing pad and moving the retainer ring to a position higher than the workpiece; and then raising the polishing head with the workpiece held on the polishing head.

A chemical mechanical polishing apparatus, includes: a platen having a polishing pad attached to an upper surface thereof, and rotatably installed in one direction by a driving means, a slurry supply unit supplying a slurry including an abrasive and an additive having a zeta potential of a first polarity to the polishing pad, an electrode disposed below the polishing pad, a power supply unit applying a voltage including a DC pulse of a second polarity, opposite to the first polarity, to the electrode, and a polishing head installed on the polishing pad, and rotating a semiconductor substrate in contact with the polishing pad.

A magnetic field generation apparatus (6) of a magnetorheological polishing device comprises at least one electromagnetic pole set capable of producing a gradient magnetic field and consisting of two electromagnetic poles having opposing polarities; the electromagnetic poles forming the electromagnetic pole set uses at least two annular magnetic poles arranged in concentric circles, wherein the polarities of two adjacent magnetic poles are opposing. The apparatus (6) is used for processing a multi-degree of freedom movement workpiece with a magnetorheological fluid, and with single clamping, is capable of simultaneously performing polishing processing on the outer surface(s) of one or more workpieces, the outer surfaces of which may be flat surfaces, cambered surfaces or complex curved surfaces. The apparatus (6) effectively solves the problem of it being difficult to finish complex shaped surfaces, reduces workpiece processing procedures, and effectively increases polishing efficiency.