A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly. The flexible membrane defines a multiplicity of independently pressurizable chambers. The valve assembly has a multiplicity of valves with each respective valve of the multiplicity of valves coupled to a respective pressure chamber from the multiplicity of independently pressurizable chambers. Each respective valve is configured to selectively couple the respective pressure chamber to one pressure supply line from a pair of pressure supply lines that include a pressure supply line from the first plurality of pressure supply lines and a pressure supply line from the second plurality of pressure supply lines.

A polishing apparatus is provided. Another aspect pertains to a self-leveling polishing apparatus for smoothing diamonds. Yet another aspect of the present system uses a ball and swivel joint in a diamond polishing machine. A further aspect employs a polishing apparatus including a diamond-holder, an elongated arm using gravity to apply downward polishing pressure of the diamond workpiece against a polishing wheel, and a sweeping transmission to cause the holder to radially move across the rotating polishing wheel.

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.

A polishing pad conditioning apparatus according to an example embodiment of the present inventive concept includes an apparatus body, a pivot arm provided on the apparatus body and including a housing having an internal space and provided at a distal end portion of the pivot arm and a head unit disposed at the distal end portion of the pivot arm. The head unit includes: a rotary motor provided in the internal space of the housing, the rotary motor including a rotary shaft; a foreign material blocking member connected to the rotary shaft; a disk holder connected to the rotary shaft; and a conditioning disk coupled to the disk holder. The foreign material blocking member includes a fluid flow groove configured to guide a movement of fluid for preventing foreign objects from entering the housing on an outer surface of the foreign material blocking member.

A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method comprises: rotating a polishing table supporting a polishing pad; and polishing the substrate by pressing the substrate against a polishing surface of the polishing pad by a polishing head, wherein polishing the substrate includes: an oscillation polishing process of polishing the substrate while causing the polishing head to oscillate along the polishing surface; and a static polishing process of polishing the substrate with the oscillation of the polishing head stopped, the static polishing process is performed after the oscillation polishing process, and the static polishing process comprises determining a static polishing end point which is a point in time at which a rate of change of torque for rotating the polishing table has reached a change-rate threshold value.

A polishing apparatus includes a polishing device, a polishing fixing device, and a controller. The polishing fixing device includes a rotating mechanism, a sensor, a movement compensation assembly, a first moving assembly and a second moving assembly. The sensor in the polishing fixing device senses pressure applied to the workpiece during polishing, the movement compensation assembly can drive the rotating mechanism to move in compensation, so as to keep the polishing pressure within a certain range for uniformity in polishing, improving the polishing quality and production efficiency of the workpiece.

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

A polishing apparatus is provided. The polishing apparatus includes: a polishing unit configured to polish a substrate by bringing a polishing tool into contact with the substrate and moving the substrate relatively to the polishing tool; a cleaning unit; and a first transfer robot configured to transfer the substrate before polishing to the polishing unit and/or configured to transfer the substrate after polishing from the polishing unit to the cleaning unit. The cleaning unit includes: at least one cleaning module, a buff processing module configured to perform a buff process to the substrate, and a second transfer robot configured to transfer the substrate between the cleaning module and the buff processing module, the second transfer robot being different from the first robot.

The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.