A buffing and polishing member has an uncompressed monolithic body of foam material having slits from an outside surface toward and less than a distance to a rotational axis of the body. The slits, on circumferential spaced planes, extend generally radially from the outside surface toward and less than a distance to the rotational axis to define a plurality of foam fingers and an unslit center portion. A fastening mechanism holds the center portion of the slit foam body in a compressed state along the rotational axis such that the uncompressed outer ends of the foam finger define a spherocylinder.

A synthetic grindstone for performing a surface processing includes abrasive grains with an abrasive grain proportion (Vg) higher than 0 vol. % and equal to or lower than 40 vol. %, includes a nonwoven-fabric binder with a binder proportion (Vb) equal to or higher than 35 vol. % and lower than 90 vol. %. The synthetic grindstone has a porosity (Vp) higher than 10 vol. % and equal to or lower than 55 vol. %.

A polishing pad, a polishing apparatus and a method of manufacturing a semiconductor package using the same are provided. In some embodiments, a polishing pad includes a sub-pad portion and a top pad portion over the sub-pad portion. The top pad portion includes a plurality of grooves having a first width and a plurality of openings having a second width different from the first width, and the openings are located in a center zone of the polishing pad.

A polishing pad for a wafer polishing apparatus according to an embodiment includes: a first NAP layer having an upper surface in direct contact with a wafer; a second NAP layer disposed under the first NAP layer to support the first NAP layer; and a polyethylene terephthalate film (PET film) layer disposed under the second NAP layer to be attached to a surface plate.

A chemical mechanical polishing method includes holding a wafer in a carrier over a polishing pad, dispensing a first slurry comprising a plurality of first abrasive particles into the carrier, rotating at least one of the carrier and the polishing pad, halting the dispensing of the first slurry, and dispensing a second slurry into the carrier after halting the dispensing of the first slurry, wherein the second slurry comprises a plurality of second abrasive particles smaller than the first abrasive particles.

An abrasive article can include a body including a bond material comprising an inorganic material, abrasive particles and a filler comprising a nitride. The filler comprising a nitride can compensate shrinkage of the body during sintering while maintaining required strength and wear properties of the body.

Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

A polishing pad, a polishing apparatus and a method of manufacturing a semiconductor package using the same are provided. In some embodiments, a polishing pad includes a sub-pad portion and a top pad portion over the sub-pad portion. The top pad portion includes a plurality of grooves having a first width and a plurality of openings having a second width different from the first width, and the openings are located in a center zone of the polishing pad.

A polishing pad for polishing a silicon carbide substrate contains polyurethane and abrasive grains fixed by the polyurethane, and has a loss tangent (tan ) represented by loss modulus (E)/storage modulus (E) of 0.1 to 0.35 at 30 C. and a glass transition temperature of 40 C. to 65 C. Also, a polishing method for polishing the silicon carbide substrate includes a holding step of holding a workpiece having the silicon carbide substrate by a chuck table and a polishing step of polishing the silicon carbide substrate by the polishing pad.

In a method of polishing a silicon wafer, a final polishing step includes an upstream polishing step and a subsequent finish polishing step. In the upstream polishing step, as a polishing agent, a first alkaline aqueous solution containing abrasive grains with a density of 110.sup.14/cm.sup.3 or more is first supplied, and the supply is then switched to a supply of a second alkaline aqueous solution containing a water-soluble polymer and abrasive grains with a density of 510.sup.13/cm.sup.3 or less. In the finish polishing step, as a polishing agent, a third alkaline aqueous solution containing a water-soluble polymer and abrasive grains with a density of 510.sup.13/cm.sup.3 or less is supplied. Thus, the formation of not only PIDs but also scratches with small depth can be suppressed.