The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 m, a specific gravity of 0.7 to 0.9 g/cm.sup.3, a surface hardness at 25 C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm.sup.2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 m.

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 m, a specific gravity of 0.7 to 0.9 g/cm.sup.3, a surface hardness at 25 C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm.sup.2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 m.

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 m, a specific gravity of 0.7 to 0.9 g/cm.sup.3, a surface hardness at 25 C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm.sup.2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 m.

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 m, a specific gravity of 0.7 to 0.9 g/cm.sup.3, a surface hardness at 25 C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm.sup.2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 m.

A polishing pad has a polishing layer comprising a polymer matrix comprising the reaction product of an isocyanate terminated urethane prepolymer and a chlorine-free aromatic polyamine cure agent and chlorine-free microelements. The microelements can be expanded, hollow microelements. The microelements can have a specific gravity measured of 0.01 to 0.2. The microelements can have a volume averaged particle size of 1 to 120 or 15 to 30 micrometers. The polishing layer is chlorine free.

A polishing pad has a polishing layer comprising a polymer matrix comprising the reaction product of an isocyanate terminated urethane prepolymer and a chlorine-free aromatic polyamine cure agent and chlorine-free microelements. The microelements can be expanded, hollow microelements. The microelements can have a specific gravity measured of 0.01 to 0.2. The microelements can have a volume averaged particle size of 1 to 120 or 15 to 30 micrometers. The polishing layer is chlorine free.

Nonwoven abrasive articles comprise a nonwoven abrasive member having an overlayer composition comprising a fatty acid metal salt disposed thereon adjacent to a working surface. The nonwoven abrasive member comprises abrasive particles adhered to a fiber web by a binder. The abrasive particles may be exposed and/or the nonwoven abrasive member may have suitable frictional properties. Methods of making the same are also disclosed.

An abrasive agglomerate particle includes fused aluminum oxide mineral bonded in a vitreous matrix. The fused aluminum oxide mineral is present in a range from 70 percent by weight to 95 percent by weight and the vitreous matrix is present at least at five percent by weight, based on the weight of the abrasive agglomerate particle. The fused aluminum oxide mineral has an average particle size of up to 300 micrometers, and the abrasive agglomerate particle has a frusto-pyramidal shape with side walls having a taper angle in a range from 2 to 15 degrees and a dimension of at least 400 micrometers. The abrasive agglomerate particles are useful in abrasive articles. The method includes contacting the workpiece with an abrasive article and moving the workpiece and the abrasive article relative to each other to abrade the workpiece.

An abrasive agglomerate particle includes fused aluminum oxide mineral bonded in a vitreous matrix. The fused aluminum oxide mineral is present in a range from 70 percent by weight to 95 percent by weight and the vitreous matrix is present at least at five percent by weight, based on the weight of the abrasive agglomerate particle. The fused aluminum oxide mineral has an average particle size of up to 300 micrometers, and the abrasive agglomerate particle has a frusto-pyramidal shape with side walls having a taper angle in a range from 2 to 15 degrees and a dimension of at least 400 micrometers. The abrasive agglomerate particles are useful in abrasive articles. The method includes contacting the workpiece with an abrasive article and moving the workpiece and the abrasive article relative to each other to abrade the workpiece.

Methods for manufacturing bonded abrasive articles, for example vitrified bonded grinding wheels. A bondable abrasive composition is prepared including abrasive particles, a binder medium and a gamma-pyrone pore inducing material, such as ethyl maltol. A precursor abrasive structure is formed from the composition. The gamma-pyrone pore inducing material is removed from the precursor abrasive structure to provide a porous precursor abrasive structure that is further processed to provide a bonded abrasive article. In some embodiments, the binder medium includes a vitreous bonding material, and the bonded abrasive article is a porous vitrified bonded grinding wheel.