An electrostatic discharge semiconductor device is disclosed and comprises: a first well region of a first doping type, extending from the surface of an epitaxial layer to the surface of the substrate; a second well region and a third well region of a second doping type; a fourth well region of the second doping type; a fifth well region and a sixth well region have a first doping type; a first injection region and a second injection region, spaced apart in each well region. The second injection region in the second and third well regions is connected to a cathode, and the first and second injection regions in the fourth well region are connected to an anode. The electrostatic discharge semiconductor device enhances its electrostatic protection capability by adjusting the avalanche breakdown voltage between the floating fifth and sixth well regions and the triggering voltage of the device.

An electrostatic discharge semiconductor device and a manufacturing method thereof are disclosed. The electrostatic discharge semiconductor device includes: a substrate, an epitaxial layer and a first well region; a second well region and a third well region located on sides of the first well region respectively; a fourth well region extending in the first well region; fifth and sixth well regions on sides of the fourth well region; a first injection region and a second injection region. The second injection region in the second well region and third well region, and the first injection region in the fifth well region and sixth well region are connected to a cathode, and all injection regions in the fourth well region are connected to an anode, to form a lateral triode current discharge path, which increases the holding voltage and adjusts the avalanche breakdown voltage and trigger voltage, and enhances electrostatic protection capability.