A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.

Disclosed herein are methods and compositions including casein, and methods for making these compositions.

Disclosed herein are methods and compositions including casein, and methods for making these compositions.

A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.

Disclosed herein are methods and compositions including casein, and methods for making these compositions.

Disclosed herein are methods and compositions including casein, and methods for making these compositions.

A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.

Compositions comprising one or more recombinant cascin proteins or fragments of recombinant cascin proteins and microbial lipids and methods of producing such compositions are provided.

The invention provides modified dairy proteins in which at least one potentially phosphorylated amino acid has been replaced with a negatively charged amino acid. The modified dairy proteins exhibit at least one of: an improved capacity to binding calcium, an improved capacity to form a micelle, an altered isoelectric point (pl), altered thermal stability and an altered zeta potential, when expressed in a heterologous expression system, relative to that of the unmodified dairy protein when it is recombinantly expressed in the same heterologous expression system. The invention also provides cells, tissues, plants, plant parts and seeds, expressing the modified dairy proteins. The invention also provides methods for the production and use of the modified proteins. The invention also provides food or beverage products or ingredients comprising the modified dairy proteins.

The invention provides modified dairy proteins in which at least one potentially phosphorylated amino acid has been replaced with a negatively charged amino acid. The modified dairy proteins exhibit at least one of: an improved capacity to binding calcium, an improved capacity to form a micelle, an altered isoelectric point (pl), altered thermal stability and an altered zeta potential, when expressed in a heterologous expression system, relative to that of the unmodified dairy protein when it is recombinantly expressed in the same heterologous expression system. The invention also provides cells, tissues, plants, plant parts and seeds, expressing the modified dairy proteins. The invention also provides methods for the production and use of the modified proteins. The invention also provides food or beverage products or ingredients comprising the modified dairy proteins.