A memory device can include an array of memory cells and an integrated inductor. The array can be provided on a first semiconductor substrate. First conductive portions of the inductor can be provided on the first semiconductor substrate, and each of the first conductive portions provides less than one revolution of a conductive path of the inductor. Second conductive portions of the inductor can be vertically separate from the first conductive portions and coupled to the first conductive portions to provide multiple revolutions of the conductive path of the inductor. The second conductive portions of the inductor can be provided on a different second semiconductor substrate. The inductor can optionally include a core region that is filled with a magnetic or non-magnetic material.

A semiconductor device includes: a first transformer; a second transformer; a first rectifier chip; a second rectifier chip; and a first frame. Each of the first rectifier chip and the second rectifier chip includes: a first output pad and a second output pad; a semiconductor substrate of a first conductivity type including a first surface; a first semiconductor region of a second conductivity type disposed on the first surface; a first transistor provided in the first semiconductor region and electrically connected to the first output pad; and a second semiconductor region of the second conductivity type provided at a position spaced apart from the first transistor in the first semiconductor region and electrically connected to the second output pad. The second semiconductor region is in contact with the semiconductor substrate. The first rectifier chip and the second rectifier chip are disposed to be spaced apart from each other.

An electronic component 1 includes an element body, a first terminal electrode disposed on a main surface of the element body, a shield conductor disposed at a position closer to the main surface of the element body, a ninth conductor configured to connect the first terminal electrode and the shield conductor, and a first inductor and a second inductor disposed in the element body. The shield conductor is disposed at a position closer to the main surface in a second direction than a first inductor conductor or a second inductor conductor is. The shield conductor is positioned at least between the first inductor conductor and the second inductor conductor, and has a portion that does not overlap the first inductor conductor or the second inductor conductor, as viewed from the second direction.

A semiconductor device includes: a switch circuit chip and a control circuit chip, which are mounted on a first die pad; a first conductive bonding material configured to bond the first die pad and the switch circuit chip; and a second conductive bonding material configured to bond the first die pad and the control circuit chip. The switch circuit chip includes: a first semiconductor substrate bonded to the first die pad by the first conductive bonding material; and a first transistor and a second transistor, which have sources connected to each other. Both the first transistor and the second transistor are high electron mobility transistors including nitride semiconductors. The source of the first transistor and the source of the second transistor are electrically connected to the first die pad via the control circuit chip.