A method includes performing an ion beam implant in a semiconductor substrate to form an ion-induced damage layer having a damaged structure, wherein a portion of the substrate above the ion-induced damage layer defines a substrate film region, and a portion below the ion-induced damage layer defines a bulk substrate region. Semiconductor device components are formed on the substrate film region, wherein the substrate film region and semiconductor device components formed thereon define a substrate film-based semiconductor device structure. Vertical openings are formed through the substrate film-based semiconductor device structure and extending down to the ion-induced damage layer. An under-etch is performed through the openings to partially remove the ion-induced damage layer. The substrate film-based semiconductor device structure is separated from the bulk substrate region at the partially removed ion-induced damage layer, and the separated substrate film-based semiconductor device structure is mounted on a carrier.