A microelectromechanical system (MEMS) semiconductor device has a first and second semiconductor die. A first semiconductor die is embedded within an encapsulant together with a modular interconnect unit. Alternatively, the first semiconductor die is embedded within a substrate. A second semiconductor die, such as a MEMS die, is disposed over the first semiconductor die and electrically connected to the first semiconductor die through an interconnect structure. In another embodiment, the first semiconductor die is flip chip mounted to the substrate, and the second semiconductor die is wire bonded to the substrate adjacent to the first semiconductor die. In another embodiment, first and second semiconductor die are embedded in an encapsulant and are electrically connected through a build-up interconnect structure. A lid is disposed over the semiconductor die. In a MEMS microphone embodiment, the lid, substrate, or interconnect structure includes an opening over a surface of the MEMS die.

A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

The present utility model discloses a package assembly of a sensor, comprising: a redistribution layer having a first face and a second face that are opposite to each other, and a first via that penetrates the first face and the second face; a first die electrically connected to the first face of the redistribution layer; a sensing element electrically connected to the first face of the redistribution layer; a cover body located between the redistribution layer and the sensing element, wherein the cover body has a second via that penetrates the cover body, and the second via communicates with the first via; and a moulding compound comprising a third face and a fourth face that are opposite to each other, wherein the moulding compound encapsulates the first die and the sensing element on the side of the first face of the redistribution layer, and the third face of the moulding compound is combined with the first face of the redistribution layer. The package assembly of the sensor allows more components to be packaged together, provides a better structural support and heat distribution, and reduces the volume and costs of the package assembly.

In described examples, a microelectromechanical system (MEMS) is located on a substrate. A silicon nitride (SiN) layer on a portion of the substrate. A mechanical structure has first and second ends. The first end is embedded in the SiN layer, and the second end is cantilevered from the SiN layer.

The present invention discloses a package assembly of a sensor, comprising: a redistribution layer comprising a first face and a second face opposite to each other; a first die electrically connected to the first face of the redistribution layer; a molding compound comprising a third face and a fourth face opposite to each other, wherein the third face of the molding compound is combined with the first face of the redistribution layer, and the molding compound encapsulates the first die on the side of the first face of the redistribution layer; and a sensing element electrically connected to the redistribution layer. The package assembly of the sensor allows more elements to be packaged together, and provides a better structural support or provides a better heat distribution for the package assembly, and at the same time, reduces the volume and costs of the entire package assembly.

A semiconductor package may include a substrate; a microelectromechanical device disposed on the substrate; an interconnection structure connecting the substrate to the microelectromechanical device; and a metallic sealing structure surrounding the interconnection structure.

A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.

A sensor device includes a sensor chip with a micro-electromechanical systems (MEMS) structure, wherein the MEMS structure is arranged at a main surface of the sensor chip, and a gas-permeable cover arranged over the main surface of the sensor chip, which covers the MEMS structure and forms a cavity above the MEMS structure.

The application relates to structures, e.g. substrates for supporting semiconductor die. The substrate defines a frame which lateral surrounds one or more die and is provided in contact with at least one side surface of the die, wherein the frame defines upper and lower surfaces of the substrate.