B81B2207/096

MEMS ENCAPSULATION STRUCTURE AND MANUFACTURING METHOD THEREOF
20220112077 · 2022-04-14 ·

A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (210,220) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) is formed on a first surface (100a) of the device wafer. The MEMS die (210,220) includes a closed micro-cavity (221), a second contact pad (201) configured to be coupled to an external electrical signal, and a bonding surface (200a,220a). The MEMS die (210,220) is bonded to the first surface (100a) by a bonding layer (500), in which an opening (510) is formed. The first contact pad (410) is electrically connected to the second contact pad (201), and a rewiring layer (700) is arranged on a surface opposing the first surface (100a). The MEMS package structure allows electrical interconnection between the MEMS die and the device wafer with a reduced package size, compared to those produced by existing integration techniques. In addition, a plurality of MEMS dies of the same or different structures and functions are allowed to be integrated on the same device wafer.

MEMS PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING SAME
20220112076 · 2022-04-14 ·

A MEMS package structure and a method for manufacturing same. The MEMS package structure comprises a MEMS die (200) and a device wafer (100). The MEMS die (200) has micro-cavities (211, 221) and contact pads (212, 222) configured to be coupled to an external electrical signal. The micro-cavity (221) of the MEMS die (200) has an opening (221a) in communication with the outside. The device wafer (100) is provided therein with a control unit corresponding to the MEMS die (200). An interconnection structure (300) is provided in the device wafer (100) and is electrically connected to each of the contact pads (212, 222) and the control unit. A rewiring layer (400) electrically connected to the interconnection structure (300) is provided on a second surface of the device wafer (100). The provision of the MEMS die (200) and the rewiring layer (400) respectively on both sides of the device wafer is conductive to reducing the size of the MEMS package structure; various MEMS dies can be integrated on one device wafer, thereby meeting the requirements for the function integration capability of the MEMS package structure in practical application.

Water proofing and water detection schemes for MEMS-based environmental sensing devices

A waterproofed environmental sensing device with water detection provisions includes an environmental sensor to sense one or more environmental properties. The device further includes an electronic integrated circuit implemented on a substrate and coupled to the environmental sensor via a wire bonding. An air-permeable cap structure is formed over the environmental sensor, and a protective layer is formed over the wire bonding to protect the wire bonding against damage.

Method for Forming Packaged Semiconductor Die with Micro-Cavity

A method for forming a packaged electronic die includes forming a plurality of bonding pads on a device wafer. A photoresist layer is deposited over the device wafer and is patterned so as to form a photoresist frame that completely surrounds a device formed on the device wafer. Conductive balls are deposited over the bonding pads. The wafer is cut to form the electronic die and the electronic die is placed over the substrate. The conductive balls are heated and compressed, moving the electronic die closer to the substrate such that the photoresist frame is in direct contact with the substrate or with a landing pad formed on the substrate. Encapsulant material is deposited such that the encapsulant material covers the electronic die and the substrate. The encapsulant material is cured so as to encapsulate the electronic die. The substrate is cut to separate the packaged electronic die.

Methods for packaging a microelectromechanical systems device

A method for packaging a MEMS device includes the following steps. A metal cap is provided that is partially anchored to a wafer comprising the MEMS device where at least one point between the cap and the wafer is unanchored, the metal cap arranged to at least substantially extend over the MEMS device. An electrical contact pad is electrically coupled to the MEMS device. A sealing layer is provided over the metal cap and the wafer such that the sealing layer seals a gap between an unanchored portion of the metal cap and the wafer to encapsulate the MEMS device, where the electrical contact pad and the metal cap include the same composition.

MEMS MICROPHONE PACKAGE

A MEMS microphone package is provided. The MEMS microphone package includes a substrate and a circuit device, the substrate has a conductive structure, and the circuit device has through silicon via structures that are electrically connected to the conductive structure. The MEMS microphone package also includes a sensor disposed on the substrate and having a connecting structure disposed on the bottom of the sensor. The connecting structure is electrically connected to the substrate and the circuit device. The MEMS microphone package further includes a cap covering the circuit device and the sensor and separated from the circuit device and the sensor.

SENSOR DEVICES WITH GAS-PERMEABLE COVER AND ASSOCIATED PRODUCTION METHODS

A sensor device includes a sensor chip with a micro-electromechanical systems (MEMS) structure, wherein the MEMS structure is arranged at a main surface of the sensor chip, and a gas-permeable cover arranged over the main surface of the sensor chip, which covers the MEMS structure and forms a cavity above the MEMS structure.

Method of manufacturing semiconductor device and semiconductor device
11148937 · 2021-10-19 · ·

A method includes attaching an upper substrate to an upper surface of a sensor substrate, forming, on an upper surface of the upper substrate, a mask providing a first opening and a second opening communicating with the first opening, the second opening having a width that decreases with increase in a distance from the first opening, carrying out a sandblast process on the upper substrate exposed to an outside via the first opening and the second opening, allowing the sensor substrate to be exposed to the outside immediately below the first opening, and forming a slope on the upper substrate immediately below the second opening, and forming a first wiring member in contact with the exposed sensor substrate and a second wiring member being in contact with the slope and continuing to the first wiring member.

Full symmetric multi-throw switch using conformal pinched through via

A hermetically sealed component may comprise a glass substrate, a device with at least one electrical port associated with the glass substrate, and a glass cap. The glass cap may have at least one side wall. The glass cap may have a shaped void extending therethrough, from top surface of the glass cap to bottom surface of glass pillar. An electrically conductive plug may be disposed within the void, the plug configured to hermetically seal the void. The electrically conductive plug may be electrically coupled to the electrical port. The glass cap may be disposed on the glass substrate, with the at least one side wall disposed therebetween, to form a cavity encompassing the device. The side wall may contact the glass substrate and the glass cap to provide a hermetic seal, such that a first environment within the cavity is isolated from a second environment external to the cavity.

Through silicon via (TSV) formation in integrated circuits
11097942 · 2021-08-24 · ·

Integrated circuit substrates having through silicon vias (TSVs) are described. The TSVs are vias extending through the silicon substrate in which the integrated circuitry is formed. The TSVs may be formed prior to formation of the integrated circuitry on the integrated circuit substrate, allowing the use of via materials which can be fabricated at relatively small sizes. The integrated circuit substrates may be bonded with a substrate having a microelectromechanical systems (MEMS) device. In some such situations, the circuitry of the integrated circuit substrate may face away from the MEMS substrate since the TSVs may provide electrical connection from the circuitry side of the integrated circuit substrate to the MEMS device.