A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.

A method of fabricating a plurality of individual microelectromechanical transducer elements includes forming a plurality of microelectromechanical transducer elements on a wafer. Each microelectromechanical transducer element has a sensitive region with a membrane and a sensing element monitoring at least one measurand and generating an electrical signal correlated with the at least one measurand, and an electrical contact outputting the electrical signal. The method includes providing, for each microelectromechanical transducer element, a sealing structure around a sensitive region and an electrical connection connected to the electrical contact. The sealing structure and the electrical connection are made out of a reflow solder material. The method includes dicing the wafer to form individual microelectromechanical transducer elements.

A ceramic substrate is mainly constituted of ceramic, and has a first main surface and a second main surface located opposite to the first main surface. A recessed portion recessed toward a first main surface side is formed in the second main surface. A wire portion extending from an outer peripheral surface of the ceramic substrate to inside of the recessed portion is formed, and a bottom portion located on the first main surface side in the recessed portion has a portion thinner than another portion of the ceramic substrate other than the bottom portion.

Provided is a sealed cavity structure, including a base; an upper cover fixed to the base in a covering manner and defining a cavity jointly with the base; a leak hole that passes through the upper cover and communicates the cavity with outside; a sealing cover plate attached and fixed to an outer surface of the upper cover and completely covering the leak hole to seal the leak hole; and a sealing cap including a cap wall pressed on a side of the sealing cover plate away from the leak hole and a cap sidewall extending from the cap wall toward a direction close to the upper cover and fixed, in an abutting manner, to the upper cover. A method for manufacturing a sealed cavity structure is further provided. In this technical solution, better sealing reliability can be achieved.

A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.

A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1° C./sec or smaller until a temperature of the substrate increases to 700° C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

A device member including a cavity, includes a base member, an interlayer, an upper layer, an opening portion, and a gas-permeable sealing layer. The base member includes a first semiconductor. The interlayer is formed on the base member and is non-conductive. The upper layer is formed on the interlayer and includes a second semiconductor. The opening portion is formed at the upper layer. The gas-permeable sealing layer is formed to seal the opening portion formed at the upper layer. The cavity is formed by removing the interlayer with an etching gas that penetrates through the sealing layer.

A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.