The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

The present disclosure provides a semiconductor structure and a method for fabricating semiconductor structure. The semiconductor structure includes a first device, configured to be a complementary metal oxide semiconductor device, wherein the first device includes a substrate, a multi-layer structure disposed on the substrate, a first hole, defined between a first end with a first circumference and a second end with a second circumference, a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference, and a second device, configured to be a micro-electro mechanical system device and bonded to the first device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber, and a sealing object configured to seal the second hole.

A semiconductor structure includes: a first device; a second device contacted with the first device, wherein a chamber is formed between the first device and the second device; a first hole disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference; a second hole disposed in the second device and aligned to the first hole; and a sealing object for sealing the second hole. The first end links with the chamber, and the first circumference is different from the second circumference, the second hole is defined between the second end and a third end with a third circumference, and the second circumference and the third circumference are smaller than the first circumference.

There is provided a micro electrical mechanical systems device package comprising: a first vacuum enclosure comprising a first enclosure wall; a micro electrical mechanical systems device being positioned within the first vacuum enclosure on a first side of the first enclosure wall; and a second vacuum enclosure, the second side of the first enclosure wall being within the second vacuum enclosure. Advantageously, the first vacuum enclosure is entirely within the second vacuum enclosure.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

A method for setting a pressure in a cavern formed using a substrate and a substrate cap, the cavern being part of a semiconductor system, including an additional cavern formed with using the substrate and of the substrate cap, a microelectromechanical system being situated in the cavern, an additional microelectromechanical system being situated in the additional cavern, a diffusion area being situated in the substrate and/or in the substrate cap, the method includes a gas diffusing with the aid of the diffusion area from the surroundings into the cavern, during the diffusing, a diffusivity and/or a diffusion flow of the gas from the surroundings into the cavern being greater than an additional diffusivity and/or an additional diffusion flow of the gas from the surroundings into the additional cavern, and/or during the diffusing, the additional cavern being at least essentially protected from a penetration of the gas into the additional cavern.

A hermetically sealed component may comprise a glass substrate, a device with at least one electrical port associated with the glass substrate, and a glass cap. The glass cap may have at least one side wall. The glass cap may have a shaped void extending therethrough, from top surface of the glass cap to bottom surface of glass pillar. An electrically conductive plug may be disposed within the void, the plug configured to hermetically seal the void. The electrically conductive plug may be electrically coupled to the electrical port. The glass cap may be disposed on the glass substrate, with the at least one side wall disposed therebetween, to form a cavity encompassing the device. The side wall may contact the glass substrate and the glass cap to provide a hermetic seal, such that a first environment within the cavity is isolated from a second environment external to the cavity.

A method for producing a micromechanical component having a substrate and a cap that are connected to each other and that enclose a first cavity, where a first pressure prevails inside the first cavity and a first gas mixture having a first chemical composition is enclosed within the first cavity, includes, in a first method step, developing in the substrate or cap an access opening connecting the first cavity to an environment of the micromechanical component, in a second method step, setting the first pressure and/or the first chemical composition in the first cavity, in a third method step, sealing the access opening using a laser by introduction of energy or heat into an absorbing part of the substrate or the cap, and, in a fourth method step, performing a thermal treatment of the substrate or the cap, thereby reducing temperature gradients in the substrate or in the cap.

A MEMS device manufacturing method and a MEMS device are provided which can enhance a degree of vacuum inside an operation space and reduce the installation cost and maintenance cost of a manufacturing apparatus as well as manufacturing cost. A MEMS device includes a MEMS device wafer having an operation element formed on a Si substrate, and a CAP wafer provided to cover the MEMS device wafer to form an operation space for operably accommodating the operation element. The CAP wafer is made of silicon and includes vent holes formed to communicate with the operation space. The operation space is sealed by performing a heat treatment in a hydrogen gas atmosphere to close the vent holes by silicon surface migration of the CAP wafer with the CAP wafer and the MEMS device wafer bonded.

A method for setting a pressure in a cavity formed with the aid of a substrate and a substrate cap, a microelectromechanical system being situated in the cavity, the substrate including a main extension plane. The method includes the following steps: in a first step a clearance is created in the substrate cap, the clearance connecting the cavity to the surroundings, a first clearance end of the clearance being formed on a first surface of the substrate cap that faces away from the cavity, a second clearance end of the clearance being formed on a cavity-side second surface of the substrate cap, the first clearance end and the second clearance end being situated at a distance from one another at least in a first direction which is parallel to the main extension plane; in a second step, after the first step, the clearance is sealed.