B81C1/00476

Semiconductor structure and manufacturing method thereof

A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures; a membrane disposed opposite to the plate and including a plurality of corrugations, and a conductive plug extending through the plate and the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

MEMS microphone and method of manufacturing the same
10735866 · 2020-08-04 · ·

A MEMS microphone includes a substrate having a cylindrical cavity, a back plate disposed over the substrate and having a plurality of acoustic holes defined therethrough, a diaphragm disposed between the substrate and the back plate, the diaphragm spaced apart from the substrate and the back plate, covering the cavity to form an air gap between the back plate, and being configured to generate a displacement with responding to an acoustic pressure and an anchor extending from an end portion of the diaphragm and extending along a circumference of the diaphragm, and the anchor including a lower surface in contact with an upper surface of the substrate to support the diaphragm, and a connecting portion, which is connected to the diaphragm, presenting a stepped cross section. Thus, the MEMS microphone may have improved flexibility and improved total harmonic distortion.

MEMS microphone and method of manufacturing the same
10735867 · 2020-08-04 · ·

A MEMS microphone includes a substrate having a cavity, a back plate being disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, the diaphragm being spaced apart from the substrate and the back plate, covering the cavity to form an air gap between the back plate, and being configured to generate a displacement in response to an acoustic pressure and a plurality of anchors extending from an end portion of the diaphragm to be integrally formed with the diaphragm, the anchors being arranged along a circumference of the diaphragm to be spaced apart from each other, and having lower surfaces making contact with an upper surface of the substrate to support the diaphragm. Thus, the MEMS microphone may have improved rigidity and flexibility.

MICROELECTROMECHANICAL COMPONENT AND METHOD FOR PRODUCING SAME

In a microelectromechanical component according to the invention, at least one microelectromechanical element (5), electrical contacting elements (3) and an insulation layer (2.2) and thereon a sacrificial layer (2.1) formed with silicon dioxide are formed on a surface of a CMOS circuit substrate (1) and the microelectromechanical element (5) is arranged freely movably in at least a degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer (4) which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate (1).

MEMS microphone and method for manufacturing the same

A semiconductor device includes a substrate having an opening extending through the substrate and at least one support member on a sidewall of the opening, a vibration membrane on the substrate, a cover layer on the vibration membrane. The substrate, the vibration membrane, and the cover layer define a cavity. The opening exposes a lower surface portion of the vibration membrane. The at least one support member on the sidewall of the opening provides support to the vibration membrane in a deformation of the vibration membrane to prevent breakage.

SINGLE CRYSTALLINE DIAMOND PART PRODUCTION METHOD FOR STAND ALONE SINGLE CRYSTALLINE MECHANICAL AND OPTICAL COMPONENT PRODUCTION

The present invention relates to a free-standing single crystalline diamond part and a single crystalline diamond part production method. The method includes the steps of: providing a single crystalline diamond substrate or layer; providing a first adhesion layer on the substrate or layer; providing a second adhesion layer on the first adhesion layer: providing a mask layer on the second adhesion layer; forming at least one indentation or a plurality of indentations through the mask layer and the first and second adhesion layers to expose a portion or portions of the single crystalline diamond substrate or layer; and etching the exposed portion or portions of the single crystalline diamond substrate or layer and etching entirely through the single crystalline diamond substrate or layer.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

METHOD FOR PRODUCING HOLLOW STRUCTURE AND HOLLOW STRUCTURE

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.