In an embodiment a MEMS microphone includes a substrate, a shield layer, a central insulation layer and a membrane, wherein the substrate has an upper surface with a first opening therein, wherein the shield layer is arranged between the upper surface of the substrate and the membrane, the shield layer having a second opening, wherein the central insulation layer is arranged between the shield layer and the membrane, the shield layer comprising a dielectric bulk material having a third opening and an etch stopper forming an edge of the central insulation layer towards the third opening such that the dielectric bulk material of the central insulation layer is completely enclosed between the shield layer, the etch stopper and the membrane, and wherein all openings are arranged one above another to form a common sound channel to the membrane.

The present disclosure relates to a microphone. In some embodiments, the microphone may comprise a diaphragm, a backplate, and a sidewall stopper. The diaphragm has a venting hole disposed therethrough. The backplate is disposed over and spaced apart from the diaphragm. The sidewall stopper is disposed along a sidewall of the diaphragm exposing to the venting hole. Thus, the sidewall stopper is not limited by a distance between the movable part and the stable part of the microphone. Also, the sidewall stopper does not alternate the shape of movable part, and thus will less likely introduce crack to the movable part. In some embodiments, the sidewall stopper may be formed like a sidewall stopper by a self-alignment process, such that no extra mask is needed.

The present disclosure relates to a method of manufacturing a MEMS device. In some embodiments, a first interlayer dielectric layer is formed over a substrate, and a diaphragm is formed over the first interlayer dielectric layer. Then, a second interlayer dielectric layer is formed over the diaphragm. A first etch is performed to form an opening through the second interlayer dielectric layer and the diaphragm and reaching into an upper portion of the first interlayer dielectric layer. A second etch is performed to the first interlayer dielectric layer and the second interlayer dielectric layer to form recesses above and below the diaphragm and to respectively expose a portion of a top surface and a portion of a bottom surface of the diaphragm. A sidewall stopper is formed along a sidewall of the diaphragm into the recesses of the first interlayer dielectric layer and the second interlayer dielectric layer.

A method of fabricating a MEMS structure includes providing a substrate comprising a logic element region and a MEMS region. Next, a logic element is formed within the logic element region. A nitrogen-containing material layer is formed to cover the logic element region and the MEMS region conformally. Then, part of the nitrogen-containing material layer within the MEMS region is removed to form at least one shrinking region. Subsequently, a dielectric layer is formed to cover the logic element region and MEMS region, and the dielectric layer fills in the shrinking region. After that, the dielectric layer is etched to form at least one releasing hole, wherein the shrinking region surrounds the releasing hole. Finally, the substrate is etched to form a chamber.

The present disclosure relates to a microphone. In some embodiments, the microphone may comprise a substrate, a diaphragm, a backplate, and a sidewall stopper. The substrate has an opening disposed through the substrate. The diaphragm is disposed over the substrate and facing the opening of the substrate. The diaphragm has a venting hole overlying the opening of the substrate. A backplate is disposed over and spaced apart from the diaphragm. A sidewall stopper is disposed along a sidewall of the venting hole of the diaphragm and thus is not limited by a distance between the movable part and the stable part. Also, the sidewall stopper does not alternate the shape of movable part, and thus will less likely introduce crack to the movable part. In some embodiments, the sidewall stopper may be formed like a sidewall stopper by a self-alignment process, such that no extra mask is needed.

The present disclosure relates to a microphone. In some embodiments, the microphone may comprise a substrate, a diaphragm, a backplate, and a sidewall stopper. The substrate has an opening disposed through the substrate. The diaphragm is disposed over the substrate and facing the opening of the substrate. The diaphragm has a venting hole overlying the opening of the substrate. A backplate is disposed over and spaced apart from the diaphragm. A sidewall stopper is disposed along a sidewall of the venting hole of the diaphragm and thus is not limited by a distance between the movable part and the stable part. Also, the sidewall stopper does not alternate the shape of movable part, and thus will less likely introduce crack to the movable part. In some embodiments, the sidewall stopper may be formed like a sidewall stopper by a self-alignment process, such that no extra mask is needed.

A method of manufacturing a high aspect ratio structure includes: a hole forming step of forming a plurality of holes in at least one principal surface of a substrate; a resist forming step of forming a first area with a resist layer and a second area without the resist layer on the principal surface provided with the plurality of holes after the hole forming step ends; and a concave portion forming step of immersing the substrate into an etching solution to form a concave portion in the substrate corresponding to the second area.

A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

A MEMS element according to the present invention is provided with a base, an insulation layer fixed to one surface of the base, a first upper layer at least portions of which are fixed to the insulation layer, and a second upper layer provided surrounding the first upper layer and disposed being separated from the first upper layer by slits, wherein the first upper layer includes, at predetermined portions, protruding portions protruding toward the second upper layer, and the protruding portions are fixed to the insulation layer.

In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.