Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

A method for fabricating a device having a cavity, includes: obtaining a device wafer including a first substrate and a device structure formed on the first substrate, depositing a first dielectric layer on the device wafer, etching the first dielectric layer to expose at least a part of the device structure and a part of the first substrate, depositing, after the etching, a second dielectric layer on the device wafer and the first dielectric layer, performing a surface treatment on a surface of the second dielectric layer, obtaining a second substrate, and bonding the second substrate with the second dielectric layer on the device wafer, thereby forming the cavity between the second substrate and the device wafer.

The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.

Various embodiments may provide a method of fabricating a meta-lens structure. The method may include forming a first dielectric layer in contact with a silicon wafer. The method may also include forming a second dielectric layer in contact with the first dielectric layer. A refractive index of the second dielectric layer may be different from a refractive index of the first dielectric layer. The method may further include, in patterning the second dielectric layer. The method may additionally include removing at least a portion of the silicon wafer to expose the first dielectric layer.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole until the holes are overfilled with the first polymer; depositing a layer of a photoimageable second polymer different than the first polymer; selectively removing the second polymer from regions outside a periphery of the holes; exposing the wafer substrate to a controlled oxidative plasma so as to reveal the frontside surface of the wafer substrate; and planarizing the frontside surface to provide holes filled with a plug of the first polymer only, each plug having a respective upper surface coplanar with the frontside surface.

The damascene wiring structure includes a base including a main surface provided with a groove, an insulating layer including a first portion provided on an inner surface of the groove and a second portion provided on the main surface, a metal layer provided on the first portion, a wiring portion embedded in the groove, and a cap layer provided to cover the second portion, an end portion of the metal layer, and the wiring portion. A surface of a boundary part between the first portion and the second portion includes an inclined surface inclined with respect to a direction perpendicular to the main surface. The end portion of the metal layer enters between the cap layer and the inclined surface, and in the end portion, a first surface along the cap layer and a second surface along the inclined surface form an acute angle.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a photoimageable thermoplastic polymer onto the frontside surface and into each hole; (ii) reflowing the polymer; (iii) selectively removing the polymer from regions outside a periphery of each hole, the selective removing comprising exposure and development of the polymer; (iv) optionally repeating steps (i) to (iii) until each hole is overfilled with the polymer; and (v) planarizing the frontside surface to provide one or more holes filled with a plug of the polymer. Each plug has a respective upper surface coplanar with the frontside surface.

A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.