Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes forming a sacrificial structure in and/or over a substrate. The method includes depositing a permeable layer over the sacrificial structure and the substrate. Further, the method includes etching the sacrificial structure through the permeable layer to form the cavity bounded by the substrate and the permeable layer.

Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.

A probe including a shell, an ultrasonic transducer unit, and at least one circuit board is provided. The ultrasonic transducer unit is disposed in the shell and includes a substrate, a vibrating membrane, and an anti-resonance structure. The vibrating membrane is disposed on the substrate and forms a cavity with the substrate. The anti-resonance structure is disposed on one side of the substrate facing away from the vibrating membrane and includes a hard layer and a glue layer connected to each other. The density of the glue layer is different from the density of the hard layer. The at least one circuit board is electrically coupled to the ultrasonic transducer unit. A method of fabricating the ultrasonic transducer unit is also provided.

The present disclosure relates to an integrated chip structure. The integrated chip structure includes a MEMS device. The MEMS device includes a frame, a proof mass, and one or more curved cantilevers coupled between the frame and the proof mass. The one or more curved cantilevers have curved outer surfaces. The curved outer surfaces have a plurality of inflection points respectively arranged between turning points. The one or more curved cantilevers include four curved cantilevers respectively arranged along a different side of the proof mass.

A micro-electro-mechanical system and a manufacturing method thereof. The micro-electro-mechanical system includes a comb tooth structure, a spring structure, and an electrode structure. The comb tooth structure includes first comb teeth and second comb teeth arranged alternately. A cantilever beam connecting the second comb teeth is connected to the spring structure; line widths of a first comb tooth and a second comb tooth are 3-7 microns, and are not less than a distance between the adjacent first comb tooth and the second comb tooth a ratio of the length of the first comb tooth to a length of the second comb tooth is 0.7-1.5, a width of the cantilever beam is not less than the line width of the second comb tooth, and thickness of the first comb tooth and a thickness of the second comb tooth are both 300 nanometers to 500 microns.

A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures; a membrane disposed opposite to the plate and including a plurality of corrugations, and a conductive plug extending through the plate and the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

MEMS device having a substrate of semiconductor material; a first structural layer of semiconductor material, on the substrate; a second structural layer of semiconductor material, on the first structural layer; an active portion, accommodating active structures formed in the first structural layer and/or in the second structural layer; a connection portion, accommodating a plurality of connection structures and arranged laterally to the active portion; and a plurality of conductive regions, arranged on the substrate and extending between the active portion and the connection portion. Each connection structure is formed by a first connection portion, in electrical contact with a respective conductive region and formed in the first structural layer, and by a second connection portion, on the first connection portion and in electrical continuity therewith, the second connection portion formed in the second structural layer. The first connection portion has a greater thickness than the second connection portion.

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

A MEMS infrared sensing device includes a substrate and an infrared sensing component. The infrared sensing component is provided above the substrate. The infrared sensing component includes a sensing plate and at least one supporting element. The sensing plate includes at least one infrared absorbing layer, an infrared sensing layer, a sensing electrode and a plurality of metallic elements. The sensing plate has a plurality of openings. The metallic elements respectively surround the openings. The sensing electrode is connected with the infrared sensing layer, and the metallic elements are spaced apart from one another. The supporting element connecting the sensing plate with the substrate.