A method of manufacturing a semiconductor device is provided. The method includes the following operations. (a) A substrate is patterned. (b) A polymer layer is formed on the patterned substrate. (c) The polymer layer is patterned. Steps (a), (b) and (c) are repeated alternatingly. An intensity of an emission light generated by a reaction of a plasma and a product produced in steps (a), (b) and (c) is detected. An endpoint in patterning the substrate is determined according to the intensity of the emission light generated by the reaction of the plasma and the product produced in only one step of steps (a), (b) and (c). A sampling rate of the intensity is ranged from 1 pt/20 ms to 1 pt/100 ms. A smooth function is used to process the intensity of the emission light generated by the reaction of the plasma and the product.

A method of reactive ion etching a substrate 46 to form at least a first and a second etched feature (42, 44) is disclosed. The first etched feature (42) has a greater aspect ratio (depth:width) than the second etched feature (44). In a first etching stage the substrate (46) is etched so as to etch only said first feature (42) to a predetermined depth. Thereafter in a second etching stage, the substrate (46) is etched so as to etch both said first and said second features (42, 44) to a respective depth. A mask (40) may be applied to define apertures corresponding in shape to the features (42, 44). The region of the substrate (46) in which the second etched feature (44) is to be produced is selectively masked with a second maskant (50) during the first etching stage, The second maskant (50) is then removed prior to the second etching stage.

A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.

A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer, a device layer, and an intermediate layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer, the device layer, and the intermediate layer from the wafer and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a part of the intermediate layer is removed from the wafer by anisotropic etching.

An integrated circuit (IC) device is provided. The IC device includes a first substrate having a frontside and a backside. The backside includes a first cavity extending into the first substrate. A dielectric layer is disposed on the backside of the first substrate, and includes an opening corresponding to the first cavity and a trench extending laterally away from the opening and terminating at a gas inlet recess. A recess in the frontside of the first substrate extends downwardly from the frontside to the dielectric layer. The recess has substantially vertical upper sidewalls which adjoin lower sidewalls which taper inwardly from the substantially vertical sidewalls to points on the dielectric layer which circumscribe the gas inlet recess. A conformal sealant layer is arranged over the frontside of the first substrate, along the substantially vertical upper sidewalls, and along the lower sidewalls. The sealant layer hermetically seals the gas inlet recess.

In examples, an electronic device includes a semiconductor die including circuitry, a microelectromechanical systems (MEMS) element on the semiconductor die and coupled to the circuitry, a bond pad on the semiconductor die and coupled to the circuitry, and a bondline on the semiconductor die between the MEMS element and the bond pad, with the bondline circumscribing the MEMS element. The electronic device includes a semiconductor interposer coupled to the bondline and having a striated exterior surface facing away from the MEMS element.

In a drive element, suppressing breakage in a support part due to stress concentration caused by torsion of the support part. The drive element includes a movable part allowed to be turned about a turn axis, a fixture, support part extending along the turn axis and connecting the movable part and the fixture, and a drive part that turns the movable part about the turn axis. A plurality of recesses extending in a direction away from the movable part is formed in side surface of the support part side by side in a thickness direction of the support part. The recess formed in a first region including at least the center in a thickness direction of the side surface of the support part has a smaller size than the recess formed in a second region other than the first region on the side surface of the support part.

The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming Si.sub.xO.sub.y.sub.z; wherein a is any one of F, Cl, H, and C.sub.kH.sub.l; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.