A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

Disclosed herein is a novel a tunable Micro-Electro-Mechanical (MEMS) Etalon system including: a functional layer patterned to define a suspension structure for suspending a first mirror being an aperture mirror of the Etalon, an aperture mirror coupled to the suspension structure, and a back layer including a second mirror, being a back mirror of the Etalon. The functional layer may be located above the back layer and the back layer may include spacer structures protruding therefrom towards the aperture mirror to define a minimal gap between the aperture mirror and the back mirror and prevent collision between them. The aspect ratio between the width of the etalon/mirrors may be high (e.g. at least 500), and the minimal gap/distance between the mirrors may be small in the order of tens of nanometers (nm). Accordingly, in some implementations the parallelism between the aperture mirror and the back mirror is adjustable to avoid chromatic artifacts associated with spatial variations in the spectral transmission profile across the etalon.

The invention presents a method for producing micro- or nano-structures of an anodized valve metal on a substrate. The method allows for accurate production of the structures, involves a small number of steps and is highly repeatable.

An anodic oxide film structure cutting method is provided. The method includes: an etching step of forming an etched groove by etching one surface of an anodic oxide film having a plurality of anodizing pores along a predetermined cutting line and forming increased-diameter pores by enlarging entrances of the anodizing pores positioned on an inner bottom surface of the etched groove; and a cutting step of cutting the anodic oxide film along the etched groove. Also provided is a unit anodic oxide film structure produced by the cutting method.

An anodic oxide film structure cutting method is provided. The method includes: an etching step of forming an etched groove by etching one surface of an anodic oxide film having a plurality of anodizing pores along a predetermined cutting line and forming increased-diameter pores by enlarging entrances of the anodizing pores positioned on an inner bottom surface of the etched groove; and a cutting step of cutting the anodic oxide film along the etched groove. Also provided is a unit anodic oxide film structure produced by the cutting method.