B81C2201/0121

Micro-electro-mechanical system (MEMS) structures and design structures

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-electro-mechanical system (MEMS) structures and design structures

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Method of processing surface of polysilicon and method of processing surface of substrate assembly

Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.

PROCESS FOR FILLING ETCHED HOLES USING FIRST AND SECOND POLYMERS
20190263657 · 2019-08-29 ·

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole until the holes are overfilled with the first polymer; depositing a layer of a photoimageable second polymer different than the first polymer; selectively removing the second polymer from regions outside a periphery of the holes; exposing the wafer substrate to a controlled oxidative plasma so as to reveal the frontside surface of the wafer substrate; and planarizing the frontside surface to provide holes filled with a plug of the first polymer only, each plug having a respective upper surface coplanar with the frontside surface.

Process for filling etched holes using photoimageable thermoplastic polymer

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a photoimageable thermoplastic polymer onto the frontside surface and into each hole; (ii) reflowing the polymer; (iii) selectively removing the polymer from regions outside a periphery of each hole, the selective removing comprising exposure and development of the polymer; (iv) optionally repeating steps (i) to (iii) until each hole is overfilled with the polymer; and (v) planarizing the frontside surface to provide one or more holes filled with a plug of the polymer. Each plug has a respective upper surface coplanar with the frontside surface.

Method of reverse tone patterning

Methods of reversing the tone of a pattern having non-uniformly sized features. The methods include depositing a highly conformal hard mask layer over the patterned layer with a non-planar protective coating and etch schemes for minimizing critical dimension variations.

METHOD FOR FORMING A PLANARIZATION STRUCTURE
20180330961 · 2018-11-15 · ·

A planarization structure is formed with a planar upper face enclosing a relief projecting from a planar substrate. The process used deposits a layer of a first material over the reliefs and then forms a layer of a second material with a planar upper face. This second material may be etched selectively with respect to the first material. The second layer is processed so that the protuberances of the first material are uncovered. A planarizing is then performed on the first material as far as the layer of the second material by selective chemical-mechanical polishing with respect to the second material.

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.